Industrial

The document describes a typical 3-phase bridge driver with a floating channel designed for bootstrap operation. The driver is fully operational up to +600V and tolerant to negative transient voltage. It has a gate drive supply range of 10-20V (IR2136/IR21368), 11.5-20V (IR21362), or 12-20V (IR21363/IR21365/IR21366/IR21367). The driver features undervoltage lockout for all channels and over-current shutdown that turns off all six drivers. It has three independent half-bridge drivers with matched propagation delay and cross-conduction prevention logic. The lowside outputs are out of phase with inputs, while the high side outputs are out of phase (IR2136/IR21363/IR21365/IR21366/IR21367/IR21368) or in phase (IR21362) with inputs. The driver is 3.3V logic compatible and has a lower di/dt gate driver for better noise immunity. It also has an externally programmable delay for automatic fault clear.

IR2133/IR2135(J&S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. It has a floating channel designed for bootstrap operation, fully operational to +600V or +1200V and tolerant to negative transient voltage. The gate drive supply range is from 10V/12V to 20V DC and up to 25V for transient. It has undervoltage lockout for all channels and over-current shut down that turns off all six drivers. The propagation delay is matched for all channels. It is 2.5V logic compatible and the outputs are out of phase with inputs.

The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications.

The IR2132 is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels.

The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. A shutdown input is provided for a customized shutdown function. An open drain FAULT signal is provided to indicate that any of the shutdowns has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.

This datasheet provides information about the IR2131, a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. The device employs proprietary HVIC technology and features a ruggedized monolithic construction. Logic inputs are compatible with 5V CMOS or LSTTL outputs. An external current sense resistor can be used to generate a current trip function that terminates all six outputs. A shutdown input is provided for a customized shutdown function. An open drain FAULT signal is also provided to indicate that any of the shutdowns have occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.

The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external cur- rent sense resistor. A current trip function which termi- nates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-cur- rent or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channel is designed for bootstrap operation, fully operational to +600V, tolerant to negative transient voltage, dv/dt immune. Gate drive supply range from 10 to 20V. All channels have undervoltage lockout. Over-current shutdown turns off all six drivers. Independent half-bridge drivers. All channels have matched propagation delay. 2.5V logic compatible. Outputs out of phase with inputs. Cross-conduction prevention logic. Also available LEAD-FREE.

The IR2128 is a high voltage, high speed power MOSFET and IGBT driver. It features a floating channel, tolerance to negative transient voltage, gate drive supply range of 10 to 20V, undervoltage lockout, and 5V Schmitt-triggered input logic. The IR2128 can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration, operating up to 600V.

The document describes the features and characteristics of the IR2127/IR2128/IR21271(S) high voltage, high speed power MOSFET and IGBT driver. The driver has a floating channel designed for bootstrap operation, fully operational to +600V, and tolerant to negative transient voltage. It has an application-specific gate drive range for motor drive and automotive applications. It supports undervoltage lockout and is compatible with 3.3V, 5V, and 15V input logic. The FAULT lead indicates shutdown has occurred. The output is in phase with the input for IR2127/IR21271 and out of phase for IR2128. It is a current sensing single channel driver.

The IR2125Z is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. The product has the following features: floating channel design, which enables bootstrap operation; fully operational to +400V; tolerance to negative transient voltage; dV/dt immunity; gate drive supply range from 12 to 18V; undervoltage lockout; current detection and limiting loop to limit driven power transistor current; fault lead indicates fault conditions and programmes shutdown time; output in phase with input.