Industrial

This datasheet introduces the characteristics of the TIP122FP and TIP127FP power transistors, including package types, absolute maximum operating conditions, currents, power, etc.

TIP122FP and TIP127FP are complementary silicon power Darlington transistors with 2000V DC isolation (U.L. compliant). They are housed in a fully molded isolated package and intended for use in power linear and switching applications.

Motorola Bipolar Power Transistor Device Data, this product has high DC current gain, low collector-emitter saturation voltage, monolithic structure, built-in base-emitter shunt resistor, TO-220AB compact package and other features.

This document introduces the parameters of TIP125, TIP126, TIP127 PNP Si-Epitaxial PlanarTransistors.

TIP122FP TIP127FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications.

This document provides information about the copyrighted material for the TIP122 product offered by the supplier.

The Motorola Bipolar Power Transistor device data describes the features and characteristics of the transistor, which is designed for general-purpose amplifier and low-speed switching applications.

The TIP120/121/122 TIP125/126/127 are silicon Epitaxial-Base NPN and PNP power transistors from STMicroelectronics, intended for use in power linear and switching applications.

TIP120, TIP121, TIP122 are NPN Si-Epitaxial PlanarTransistors. They have plastic case TO-220AB and power dissipation of 2 W.

TIP117F is a PNP type transistor manufactured by Mitsubishi Electric Corporation. It has a high current gain (hFE=1000) and low collector-emitter saturation voltage (VCE(sat)=-2.5V). It can be used for industrial applications.

This document provides the absolute maximum ratings and technical parameters of the TIP120, TIP121, TIP122 NPN plastic power transistors and TIP125, TIP126, TIP127 PNP plastic power transistors. These transistors are suitable for linear and switching applications, with a maximum collector current of 5.0A and a maximum total power dissipation of 65W. Additionally, the document provides pin configuration and package information.

This document provides technical data for the TIP117 epitaxial planar PNP transistor, including its features and characteristics such as high DC current gain and low collector-emitter saturation voltage. The TIP117 is a monolithic transistor with built-in base-emitter shunt resistors, designed for industrial use.

TIP115/116/117 is a PNP type silicon Darlington transistor produced by Fairchild Semiconductor Corporation.