This document introduces the parameters of TIP125, TIP126, TIP127 PNP Si-Epitaxial PlanarTransistors.
This document is a datasheet for the PNP TIP125, TIP126, and TIP127 series of Si-Epitaxial Planar Darlington transistors. It provides comprehensive electrical specifications including maximum ratings for collector current, voltage, and power dissipation, as well as electrical characteristics such as cutoff currents and current gain at a junction temperature of 25°C.
| Collector current (dc) | 5 A |
|---|---|
| Peak Collector current | 8 A |
| Collector-Emitter voltage (TIP125) | 60 V |
| Junction temperature range | - 65…+ 150°C |
The recommended complementary NPN transistors are TIP120, TIP121, and TIP122.
The transistors are housed in a Plastic case TO-220AB.
The plastic material has UL classification 94V-0.