TIP122FP and TIP127FP are complementary silicon power Darlington transistors with 2000V DC isolation (U.L. compliant). They are housed in a fully molded isolated package and intended for use in power linear and switching applications.
This document describes the TIP122FP (NPN) and TIP127FP (PNP) complementary silicon epitaxial-base power transistors. These devices utilize a monolithic Darlington configuration within a fully molded isolated TO-220FP package, intended for use in both power linear and switching applications.
| Collector-Base Voltage (Vcbo) | 100 V |
|---|---|
| Collector-Emitter Voltage (Vceo) | 100 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 5 A |
| Collector Peak Current (lom) | 8 A |
| Base Current (Ip) | 0.1 A |
| Total Dissipation at Tcase < 25 °C | 29 W |
| Thermal Resistance Junction-case (Rthj-case) | 4.3 °C/W Max |
They are intended for use in power linear and switching applications.
They are available in a fully molded isolated TO-220FP package.
The maximum operating junction temperature is 150 °C.