TOREX Manuals

XC2406A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption using CMOS process. The XC2406 is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function. In the stand-by mode, consumption current is greatly reduced and there is no need to add external ON/OFF control function like LDO. External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are 3.45V, 3.00V, 2.85V and 1.80V.

XC2404A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure, low power consumption. The device offers easy output matching to 50Ω for input and output with less external components. The device operates at 1.2V. For higher power supplies such as 1.8V and 2.85V, the device can operate with a self bias of one adding resister.

The XC2401A8167R-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption using CMOS process. The device offers easy output matching to 50Ω for input and output with less external components. An internal self bias function eliminates external bias setting.

The XC221A series is an input / output rail to rail CMOS Op Amp. With rail to rail functions, operation is guaranteed from power supplies as low as 1.2V. Moreover, since the XC221A series comes in an ultra small SOT-25 package, the series is particularly suited for use with various types of portable phones. Bandwidths of 550kHz and slew rates of 0.5V can be achieved even with power consumption as low as 100μA. Even with large capacitance levels of CL = 200pF (unity gain connection), the XC221A series will not be susceptible to oscillation.

XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. This product is equipped with a static protection diode and can be mounted in high density.

The XP152A11E5MR-G is a P-channel Power MOSFET from Fujitsu Microelectronics with low on-state resistance and ultra high-speed switching characteristics. It can achieve high-speed switching, thereby efficiently setting the IC and saving energy. The built-in gate protect diode is used to prevent static interference. The small SOT-23 package makes high density mounting possible.

XP162A12A6PR-G is a P-channel Power MOSFET from Infineon with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

The XP161A1265PR-G is an N-channel power MOSFET from Infineon Technologies, with low on-state resistance and ultra high-speed switching characteristics. The product has low on-state resistance, ultra high-speed switching, built-in static protection diode, and small SOT-89 package for high density mounting.

XP161A11A1PR-G is a N-channel power MOSFET from Infineon with low on-state resistance and ultra high-speed switching characteristics. The device is packaged in a SOT-89 package and has environmental, small size and other advantages, suitable for notebook computers, mobile phones and other applications.

XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. It has low on state resistance, which enables efficient energy saving. It has a built-in gate protect diode to counter static and is suitable for applications such as notebook PCs, cellular and portable phones, on-board power supplies, and Li-ion battery systems. The product features ultra high-speed switching, low on state resistance, and a small package.

XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

XC3202B Series Low Power Consumption Hall IC (Magnetic Sensor) is a Hall effect magnetic sensor IC with a built-in CMOS output driver. The device features low power consumption and small packaging which is ideally suited for battery powered portable applications such as mobile phones, electronic dictionaries and handheld game consoles. When the magnetic flux density is higher than the operating point (Bop), the Low level signal is output. The High level signal is output when the magnetic flux density is lower than the release point (Brp).