Micron manuals, page 3
MICRON SYNCHRONOUS DRAM16Mb x16 SDRAM
This document is a technical data sheet about the 16Mb x16 SDRAM product produced by Micron Technology. The product features PC100 functionality, fully synchronous operation, and internal bank and column addressing.
MICRON SYNCHRONOUS DRAM 128Mb x4 x8 x16 SDRAM
MT48LC32M4A2 is a Micron 8MB x4 SDRAM that supports PC100 and PC133 standards, supports programmable burst lengths of 1, 2, 4, 8 or full page, supports self-refresh mode and low power self-refresh mode, supports 64ms, 4096-cycle refresh, uses LVTTL-compatible inputs and outputs, and a single power supply of +3.3V ±0.3V.
MICRON SYNCHRONOUS DRAM 256Mb x4 x8 x16 SDRAM Features
Features of 256Mb: x4, x8, x16 SDRAM
MICRON SYNCHRONOUS DRAM 512Mb x4 x8 x16 SDRAM
The document discusses the technical specifications and features of Micron Technology, Inc.'s 512Mb SDRAM. The product supports different configurations and speeds, and offers high synchronicity and internal pipelined operation.
MICRON SYNCHRONOUS DRAM 256Mb 16 Meg x16 8 Meg x 32 Mobile SDRAM Features
MT48H16M16LF is a mobile SDRAM. This document introduces its features and characteristics, including: full synchronous, VDD/VDDQ = 1.70–1.95V, internal, pipelined operation, four internal banks, programmable burst lengths, auto precharge, auto refresh and self refresh modes, LVTTL-compatible inputs and outputs, on-chip temperature sensor, partial-array self refresh, deep power-down, selectable output drive, 64ms refresh period, etc.
MICRON SYNCHRONOUS DRAM 128Mb x16-Mobile SDRAM Features
This document describes Micron's synchronous DRAM product MT48H8M16LF, which features temperature compensated self refresh, fully synchronous operation, internal pipelined operation, and hiding row access/precharge.
MICRON SYNCHRONOUS DRAM 512Mb 32 Meg x16 Meg x 32 Mobile SDRAM Features
MT48H32M16LF/LG is a Mobile SDRAM chip produced by Micron Technology. This chip has Endur-IC technology, supports 1.7-1.95V voltage, and has four banks that can work simultaneously. It also supports programmable burst lengths, including 1, 2, 4, 8, and continuous bursts.
MICRON SYNCHRONOUS DRAM 256Mb x16 Mobile SDRAM
256Mb: x16 Mobile SDRAM is a mobile storage device produced by Micron. Its features include programmable burst length, auto refresh mode, self refresh mode, 64ms, 8,192-cycle refresh, LVTTL-compatible input and output, low voltage power supply, deep power down, partial array self refresh power-saving mode, industrial operating temperature (-40oC to +85oC).
MICRON SYNCHRONOUS DRAM 256Mb x4 x8 x16 DDR333 SDRAM Addendum
256Mb: x4, x8, x16 DDR333 SDRAM technical specifications
MICRON SYNCHRONOUS DRAM 128Mb x32 DDR SDRAM
This document describes the features and characteristics of Micron's 128Mb x32 DDR SDRAM product, including voltage, data transfer rate, data storage structure, clock inputs, etc.
MICRON SYNCHRONOUS DRAM 128Mb x4 x8 x16 DDR SDRAM
128Mb: x4, x8, x16 DDR SDRAM is a memory produced by Micron Technology
MICRON SYNCHRONOUS DRAM 128Mb x4 x8 x16 DDR333 SDRAM Addendum
128Mb: x4, x8, x16 DDR333 SDRAM is a storage product produced by Micron Technology. The product uses a 167MHz clock frequency, 333Mb/s/p data rate, and works at a voltage of +2.5V ±0.2V, VDDQ = +2.5V ±0.2V.
MICRON SYNCHRONOUS DRAM 512Mb x4 x8 x16 DDR SDRAM
512Mb: x4, x8, x16 DDR SDRAM is a DDR memory product produced by Micron Technology, Inc., with a double data rate (DDR) architecture that can access data twice per clock cycle.
MICRON SYNCHRONOUS DRAM 512Mb x32 DDR SDRAM
64Mb: x32 DDR SDRAM is a product of Micron Technology, Inc., which has bidirectional data storage buffer (DQS), internal pipelined double data rate (DDR) architecture, two data access cycles, reduced output drive option, differential clock inputs (CK and CK#), commands entered on each positive CK edge, DQS edge aligned with data for READs, center aligned with data for WRITEs, dynamic clock lock (DLL) to align DQ and DQS transitions with CK, four internal memory rows can work simultaneously, data mask (DM) for masking write data, programmable burst lengths: 2, 4, 8 or full page, 32 ms, 4096-cycle auto refresh (7.8µs/cycle), auto precharge option, auto refresh and self refresh modes, programmable input / output (SSTL_2 compatible) and other features
MICRON SYNCHRONOUS DRAM 128Mb x8 DDR400 SDRAM Addendum
This document describes the technical specifications and features of the 128Mb x8DDR400 SDRAM product produced by Micron Technology, Inc., including timing parameters, architecture, refresh count, address allocation, data rate, etc.