Micron Manuals

MT48H16M16LF is a mobile SDRAM. This document introduces its features and characteristics, including: full synchronous, VDD/VDDQ = 1.70–1.95V, internal, pipelined operation, four internal banks, programmable burst lengths, auto precharge, auto refresh and self refresh modes, LVTTL-compatible inputs and outputs, on-chip temperature sensor, partial-array self refresh, deep power-down, selectable output drive, 64ms refresh period, etc.

This document describes Micron's synchronous DRAM product MT48H8M16LF, which features temperature compensated self refresh, fully synchronous operation, internal pipelined operation, and hiding row access/precharge.

MT48H32M16LF/LG is a Mobile SDRAM chip produced by Micron Technology. This chip has Endur-IC technology, supports 1.7-1.95V voltage, and has four banks that can work simultaneously. It also supports programmable burst lengths, including 1, 2, 4, 8, and continuous bursts.

256Mb: x16 Mobile SDRAM is a mobile storage device produced by Micron. Its features include programmable burst length, auto refresh mode, self refresh mode, 64ms, 8,192-cycle refresh, LVTTL-compatible input and output, low voltage power supply, deep power down, partial array self refresh power-saving mode, industrial operating temperature (-40oC to +85oC).

256Mb: x4, x8, x16 DDR333 SDRAM technical specifications

This document describes the features and characteristics of Micron's 128Mb x32 DDR SDRAM product, including voltage, data transfer rate, data storage structure, clock inputs, etc.

128Mb: x4, x8, x16 DDR SDRAM is a memory produced by Micron Technology

128Mb: x4, x8, x16 DDR333 SDRAM is a storage product produced by Micron Technology. The product uses a 167MHz clock frequency, 333Mb/s/p data rate, and works at a voltage of +2.5V ±0.2V, VDDQ = +2.5V ±0.2V.

512Mb: x4, x8, x16 DDR SDRAM is a DDR memory product produced by Micron Technology, Inc., with a double data rate (DDR) architecture that can access data twice per clock cycle.

64Mb: x32 DDR SDRAM is a product of Micron Technology, Inc., which has bidirectional data storage buffer (DQS), internal pipelined double data rate (DDR) architecture, two data access cycles, reduced output drive option, differential clock inputs (CK and CK#), commands entered on each positive CK edge, DQS edge aligned with data for READs, center aligned with data for WRITEs, dynamic clock lock (DLL) to align DQ and DQS transitions with CK, four internal memory rows can work simultaneously, data mask (DM) for masking write data, programmable burst lengths: 2, 4, 8 or full page, 32 ms, 4096-cycle auto refresh (7.8µs/cycle), auto precharge option, auto refresh and self refresh modes, programmable input / output (SSTL_2 compatible) and other features

This document describes the technical specifications and features of the 128Mb x8DDR400 SDRAM product produced by Micron Technology, Inc., including timing parameters, architecture, refresh count, address allocation, data rate, etc.

This document describes the features and characteristics of Micron's 1Gb DDR SDRAM products, including voltage, data storage mode, clock inputs, command inputs, data transmission mode, etc.

MT46H8M16 is a DDR SDRAM chip produced by Micron Technology, Inc. It has 2 Meg x 16 x 4 Banks and four internal banks for concurrent operation.

MT46H16M16LF is a mobile DDR SDRAM product released by Micron Technology. The product uses bidirectional data strobes, supports 1.8V voltage, and internally uses a dual-channel architecture to achieve two data accesses per cycle. The product has four internal banks that can perform concurrent operations. In addition, the product also supports programmable burst lengths, auto refresh and self refresh modes.