The IR2301(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR21093 is a high voltage, high speed power MOSFET and IGBT driver from IR company. It features a floating channel design and is suitable for use in switching power supplies, inverters and other applications.
The document describes a typical half-bridge driver with features such as floating channel, positive and negative offset power supply, low di/dt gate driver, and cross-conduction prevention.
IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature low drive current, enabling fast turn-off and low voltage turn-off.
IR207LM..CS02CB is a fast recovery diode produced by International Rectifier. The main features are a reverse breakdown voltage range of 200 to 600 volts and a maximum forward voltage of 1300 millivolts. It can be used in power supplies and switch circuits.
This document provides information on the mechanical characteristics and major performance parameters of the IR207DM16CCB standard recovery diode. The diode has a maximum forward voltage of 1.15V and a reverse breakdown voltage of 1600V. The document also provides information on the dimensions, packaging, and storage requirements of the product.
IRF2907Z IRF2907ZS IRF2907ZL is a power MOSFET designed for automotive applications by International Rectifier. It has extremely low on-resistance, 175°C operating temperature, fast switching speed and improved repetitive avalanche rating. This design is extremely efficient and reliable for use in automotive applications and other applications.
IRF2907ZS-7PPbF is a high performance power MOSFET from International Rectifier. Its features include ultra low on-resistance, 175°C operating temperature, fast switching speed, and repetitive avalanche capability. It is suitable for high current high reliability applications.
IRF3000 is a MOSFET power MOSFET for high frequency DC-DC converters. It has low gate-to-drain charge to reduce switching losses. It is fully characterized for capacitance, avalanche voltage and current, simplifying design.
This document describes the features and characteristics of HEXFET® Power MOSFETs, specifically designed for automotive applications. It has extremely low on-resistance, a 175°C operating temperature, fast switching speed, and improved repetitive avalanche rating. These features make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.
This document describes the features and characteristics of the 720A phase control thyristors ST330C..C series, which are suitable for applications such as DC motor controls, controlled DC power supplies, and AC controllers.
This document describes the features and characteristics of the 650A PHASE CONTROL THYRISTORS Hockey Puk Version ST330C..L SERIES 1, as well as its typical applications and major ratings and characteristics.
