Infineon manuals, page 29
INFINEON BAT64... Silicon Schottky Diodes Manual
BAT64 series is a low loss, fast recovery, silicon Schottky diodes for meter protection, bias isolation and clamping application with integrated diffused guard ring and low forward voltage
INFINEON SPP07N60CFD Manual
The SPP07N60CFD CoolMOSTM power transistor features an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft switching PWM stages, LCD, and CRT TV applications.
INFINEON SPD02N60C3 SPU02N60C3 handbook
SPD02N60C3/SPU02N60C3 is a high voltage power transistor of Cool MOS™ series, with features such as ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and 150°C operating temperature
INFINEON BSC022N03S handbook
BSC022N03S OptiMOS®2 Power Transistor is a fast switching MOSFET for SMPS optimized for notebook DC/DC converters. It is qualified according to JEDEC1 for target applications. It features N-channel, logic level, very low on-resistance R DS(on), excellent gate charge x R DS(on) product (FOM), superior thermal resistance, avalanche rated, dv/dt rated.
INFINEON BSP 315 P handbook Page 1 BSP 31
BSP 315 P SIPMOS Small-Signal-Transistor is a P-Channel, Enhancement mode, Avalanche rated, Logic Level, dv/dt rated electronic component.
INFINEON BSP 317 P handbook
The BSP317P SIPMOS is a logic-level N-channel enhancement mode MOSFET from Texas Instruments with a maximum VDS of -250V and a maximum Ptot of 1.8W, with an operating temperature of -55-150℃.
INFINEON SPA20N60CFD handbook
SPA20N60CFD is CoolMOSTM Power Transistor, features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge and ultra low gate charge, Extreme dv/dt rated, High peak current capability, Periodic avalanche rated and qualified according to JEDEC0) for target applications
INFINEON IKA06N60T handbook
INFINEON BCV62 datasheet
BCV62 is a PNP silicon double transistor designed for use as a current mirror. It features good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.
INFINEON IPP90R500C3 handbook
The IPP90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, and high peak current capability. It is qualified according to JEDEC1) for target applications and is lead-free with lead plating, RoHS compliant, and features ultra low gate charge. CoolMOS™ 900V is designed for Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, and Industrial SMPS.
INFINEON PROFET ITS612N1 handbook
The PROFET® ITS612N1 is a smart two channel highside power switch from Infineon Technologies AG for industrial applications. It features overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in OFF-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection. It can be used for µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications, for all types of resistive, inductive and capacitive loads, and to replace electromechanical relays, fuses and discrete circuits.
INFINEON IPD50R520CP handbook
IPD50R520CP is a power transistor. It features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant and qualified according to JEDEC1) for target applications.
INFINEON C515C Manual
C515C 8-Bit Single-Chip Microcontroller is a single-chip microcontroller released by Infineon Technologies
INFINEON BSP296 handbook
BSP296 is a N-channel enhancement mode logic level power MOSFET from Infineon Technologies. It has a maximum continuous drain current of 1.1A, a maximum on-resistance of 0.7Ω, a maximum reverse diode dv/dt of 6kV/µs, and a maximum power dissipation of 1.79W. The device is available in a PG-SOT-223 package and is rated for operation in temperatures ranging from -55°C to +150°C.
INFINEON IPW90R500C3 handbook
The IPW90R500C3 is a CoolMOS™ 900V power transistor with the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, and Pb-free lead plating; RoHS compliance; ultra low gate charge
