The CMPD914 is a high voltage high speed switching diode produced by Central Semiconductor Corporation. It is manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount package. It is designed for high voltage high speed switching applications.
The CENTRAL SEMICONDUCTOR CMPDM7002A is a special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This special device offers low rDS(ON) and low VDS (ON).
The CMPF4391 is a N-channel silicon field effect transistor manufactured by Central Semiconductor Corp. using the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications.
The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode configurations, manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-23 surface mount case. These devices are designed for applications requiring high voltage switching diodes.
CMPD7000 is an ultra-high speed silicon switching diode manufactured by Central Semiconductor using the epitaxial planar process, in an epoxy molded surface mount package, connected in a series configuration, designed for high speed switching applications.
The document describes the CENTRAL SEMICONDUCTOR CMPD5001 series silicon switching diodes, which are designed for switching inductive load applications requiring extremely high current capability. The product features low reverse current, high forward current, and high current capability.
The CMPD4150 is a high current, high speed switching diode manufactured by Central Semiconductor Corp. It is manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount package. It is designed for high speed switching applications.
The Central Semiconductor CMPD2836 and CMPD2838 types are ultra-high speed switching diodes manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.
The CENTRAL SEMICONDUCTOR CMPD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability.
This document is a datasheet for the CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types of silicon switching diodes that are manufactured by the epitaxial planar process and are designed for applications requiring high voltage capability.
