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This document describes the features and characteristics of the AT49BV802D(T) product, including single voltage read/write operation, access time, sector erase architecture, fast byte/word program time, low-power operation, etc.
AT49BV160D(T) is a 16-megabit Flash memory with a 32K word (64K byte) sector erase architecture with individual write lockout. It features a fast word program time (10 microseconds) and fast sector erase time (100 milliseconds). The device can be read or reprogrammed using a single power supply, making it ideal for in-system programming.
The AT49BV320D(T) is a 2.7 volt 32-megabit flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-sys- tem programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes.
The AT49BV320S(T) is a 32Mbit flash memory device from Atmel. It has 64K byte 63 sectors and 8K byte 8 sectors and supports single voltage read/write operations.
AT49SV322D(T) is a 1.8-volt 32-megabit Flash memory with features including single voltage read/write operation, 80 ns access time, 63 32K word (64K Bytes) sectors and 8 4K word (8K Bytes) sectors with individual write lockout, fast word program time, low-power operation, etc.
The AT49BV640S is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed
AT29C512 is a 5V-only in-system Flash programmable and erasable read-only memory (PEROM) with features like fast read access time, sector program operation, hardware and software data protection, etc.
This application note describes the design benefits of Atmel's AT29 Flash architecture as well as how the device ID feature is used to adjust for varying densities and supply voltages.
Atmel Flash memories are programmable erasable read-only memories implemented on an advanced sub-micron process using a highly efficient memory cell. They use Fowler-Nordheim tunneling for erasing and programming, requiring low programming current and supporting sector programming. Compared to first generation Flash memories, they offer a cleaner hardware implementation and more flexible and simple programming commands.
This document introduces the software chip erase method of AT29 series flash, including the principle and steps of the method, and gives an example code.
