ATMEL Manuals

The AT25080A/160A/320A/640A is a serial electrically-erasable programmable read-only memory (EEPROM) from Microchip, offering 8192/16384/32768/65536 bits of storage space, and is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

The AT25128A/256A is a 131,072/262,144-bit serial electrically erasable programmable read-only memory (EEPROM) organized as 16,384/32,768 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The devices are available in space-saving 8-lead PDIP, 8-lead EIAJ SOIC, 8-lead JEDEC SOIC, 8-lead TSSOP, 8-ball dBGA2, and 8-lead Ultra Thin SAP packages.

This datasheet describes the features and characteristics of the AT25320B/640B device. The device is a serial electrically-erasable programmable read-only memory (EEPROM) with a capacity of 32768/65536 bits and an organization of 4096/8192 8-bit words. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

AT25080B/160B is 8192/16384 bits serial electrically-erasable programmable read-only memory (EEPROM) organized as 1024/2048 words of 8 bits each, optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

AT25512 is a serial electrically-erasable programmable read only memory (EEPROM) of 524,288 bits organized as 65,536 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The device is available in space saving 8-lead JEDEC SOIC, 8-lead TSSOP and 8-lead SAP packages. In addition, the entire family is available in 1.8V (1.8V to 5.5V) versions. AT25512 is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO) and Clock signal (SCK).

Introduces the interface method of AT93CXX serial EEPROM with AT89CX051 microcontrollers

AT93C56A/66A (AT3552m/2k) SPI EEPROM Product Qualification report summarizes the product level qualification data, ESD, Latchup, and Write Endurance for the AT93C56A/66A Serial EEPROM. This data, in conjunction with the AT35000 Process Qualification and Reliability Report, qualifies the AT93C56A/66A.

The AT28C010 is a high-performance EEPROM with 1 megabyte of storage space organized as 131,072 8-bit words. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically complete the page write operation.

AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory from Atmel. It has 4Mb of memory and is organized as 524,288 words by 8 bits. The read access time is 70 ns (VCC = 2.7V to 3.6V) and 55 ns (VCC = 4.5V to 5.5V). The power dissipation is 72 mW (VCC = 2.7V to 3.6V) and 110 mW (VCC = 4.5V to 5.5V).

AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only memory (PEROM) produced by Atmel. Its features are single supply voltage range 3V to 3.6V, 3-volt Only Read and Write Operation, Software Protected Programming, Low-power Dissipation - 15 mA Active Current - 50 µA CMOS Standby Current, Fast Read Access Time - 120 ns, Sector Program Operation - Single-cycle Reprogram (Erase and Program), 512 Sectors (128 Bytes / Sector), Internal Address and Data Latches for 128 Bytes, Fast Sector Program Cycle Time - 20 ms Max, Internal Program Control and Timer, DATA Polling for End of Program Detection, Typical Endurance > 10,000 Cycles, CMOS and TTL Compatible Inputs and Outputs, Green (Pb / Halide-free) Packaging Option.

AT29BV010A is a 2.7-3.6V single supply voltage Flash memory that is programmable and erasable. It features fast read access time, low power dissipation, sector program operation, two 8K bytes boot blocks, and more.

AT29BV020 is a single-voltage 2.7-volt in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology, the device offers access times to 120 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel's Low Voltage Flash family of products. To allow for simple in-system reprogrammability, the AT29BV020 does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is accomplished through internal address and data latches for 256 bytes. Two 8K bytes boot blocks with lockout are provided on the AT29BV020 and have 1024 sectors (each 256 bytes).

The document describes the features and characteristics of the AT29LV020 product, including single voltage supply, 3V to 3.6V supply range, fast read access time, low power dissipation, etc.

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM)