ATMEL Manuals

AT29C512 is a 5V-only in-system Flash programmable and erasable read-only memory (PEROM) with features like fast read access time, sector program operation, hardware and software data protection, etc.

The AT49BV640S is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed

This document introduces the AT49BV640D(T) storage device's features

AT49SV322D(T) is a 1.8-volt 32-megabit Flash memory with features including single voltage read/write operation, 80 ns access time, 63 32K word (64K Bytes) sectors and 8 4K word (8K Bytes) sectors with individual write lockout, fast word program time, low-power operation, etc.

The AT49BV320S(T) is a 32Mbit flash memory device from Atmel. It has 64K byte 63 sectors and 8K byte 8 sectors and supports single voltage read/write operations.

The AT49BV320D(T) is a 2.7 volt 32-megabit flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-sys- tem programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes.

This document is the AT49BV163D(T) product introduction manual, which introduces the features and characteristics of the product

AT49BV160S(T) is a 2.7V 16Mbit Flash memory from Atmel with 39 sectors for erase operations.

AT49BV160D(T) is a 16-megabit Flash memory with a 32K word (64K byte) sector erase architecture with individual write lockout. It features a fast word program time (10 microseconds) and fast sector erase time (100 milliseconds). The device can be read or reprogrammed using a single power supply, making it ideal for in-system programming.

This document describes the features and characteristics of the AT49BV802D(T) product, including single voltage read/write operation, access time, sector erase architecture, fast byte/word program time, low-power operation, etc.

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM)

The document describes the features and characteristics of the AT29LV020 product, including single voltage supply, 3V to 3.6V supply range, fast read access time, low power dissipation, etc.

AT29BV020 is a single-voltage 2.7-volt in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology, the device offers access times to 120 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel's Low Voltage Flash family of products. To allow for simple in-system reprogrammability, the AT29BV020 does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is accomplished through internal address and data latches for 256 bytes. Two 8K bytes boot blocks with lockout are provided on the AT29BV020 and have 1024 sectors (each 256 bytes).