ATMEL Manuals

AT29BV010A is a 2.7-3.6V single supply voltage Flash memory that is programmable and erasable. It features fast read access time, low power dissipation, sector program operation, two 8K bytes boot blocks, and more.

AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only memory (PEROM) produced by Atmel. Its features are single supply voltage range 3V to 3.6V, 3-volt Only Read and Write Operation, Software Protected Programming, Low-power Dissipation - 15 mA Active Current - 50 µA CMOS Standby Current, Fast Read Access Time - 120 ns, Sector Program Operation - Single-cycle Reprogram (Erase and Program), 512 Sectors (128 Bytes / Sector), Internal Address and Data Latches for 128 Bytes, Fast Sector Program Cycle Time - 20 ms Max, Internal Program Control and Timer, DATA Polling for End of Program Detection, Typical Endurance > 10,000 Cycles, CMOS and TTL Compatible Inputs and Outputs, Green (Pb / Halide-free) Packaging Option.

AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory from Atmel. It has 4Mb of memory and is organized as 524,288 words by 8 bits. The read access time is 70 ns (VCC = 2.7V to 3.6V) and 55 ns (VCC = 4.5V to 5.5V). The power dissipation is 72 mW (VCC = 2.7V to 3.6V) and 110 mW (VCC = 4.5V to 5.5V).

The AT28C010 is a high-performance EEPROM with 1 megabyte of storage space organized as 131,072 8-bit words. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200 µA. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically complete the page write operation.

AT93C56A/66A (AT3552m/2k) SPI EEPROM Product Qualification report summarizes the product level qualification data, ESD, Latchup, and Write Endurance for the AT93C56A/66A Serial EEPROM. This data, in conjunction with the AT35000 Process Qualification and Reliability Report, qualifies the AT93C56A/66A.

Introduces the interface method of AT93CXX serial EEPROM with AT89CX051 microcontrollers

AT25512 is a serial electrically-erasable programmable read only memory (EEPROM) of 524,288 bits organized as 65,536 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The device is available in space saving 8-lead JEDEC SOIC, 8-lead TSSOP and 8-lead SAP packages. In addition, the entire family is available in 1.8V (1.8V to 5.5V) versions. AT25512 is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO) and Clock signal (SCK).

AT25080B/160B is 8192/16384 bits serial electrically-erasable programmable read-only memory (EEPROM) organized as 1024/2048 words of 8 bits each, optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

This datasheet describes the features and characteristics of the AT25320B/640B device. The device is a serial electrically-erasable programmable read-only memory (EEPROM) with a capacity of 32768/65536 bits and an organization of 4096/8192 8-bit words. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

The AT25128A/256A is a 131,072/262,144-bit serial electrically erasable programmable read-only memory (EEPROM) organized as 16,384/32,768 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The devices are available in space-saving 8-lead PDIP, 8-lead EIAJ SOIC, 8-lead JEDEC SOIC, 8-lead TSSOP, 8-ball dBGA2, and 8-lead Ultra Thin SAP packages.

The AT25080A/160A/320A/640A is a serial electrically-erasable programmable read-only memory (EEPROM) from Microchip, offering 8192/16384/32768/65536 bits of storage space, and is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

The AT25010A/020A/040A series is a low-power, low-voltage version of the AT25010 series that provides 1024/2048/4096 bits of programmable read-only memory (EEPROM) organized as 128/256/512 words of 8 bits each. The series is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential.

AT24C1024B is a serial electrically erasable and programmable read-only memory (EEPROM) with an internal organization of 131,072 words of 8 bits each. It supports two-wire serial interface, low-voltage operation, noise suppression, bidirectional data transfer, and other features. It is optimized for low-power and low-voltage applications in industrial and commercial settings. The device is available in various packages and voltage versions.

AT24C512B is a low-power, low-voltage operation serial electrically erasable and programmable read-only memory (EEPROM) provides 524,288 bits of storage space, organized as 65,536 8-bit words. The device supports 8 devices sharing a common 2-wire bus, and can be used in many industrial and commercial applications where low power and low voltage operation are essential. The device provides 8-pin PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP, 8-ball dBGA2 and 8-lead Ultra Thin SAP packages to meet the needs of different application scenarios.