ATMEL Manuals

The AT27C020 is a low-power, high-performance, 2,097,152-bit, one-time programmable read-only memory (OTP EPROM) organized as 256K by 8 bits. It requires only one 5V power supply in normal read mode operation. Any byte can be accessed in less than 55 ns, eliminating the need for speed-reducing WAIT states on high-performance microprocessor systems. In read mode, the AT27C020 typically consumes 8 mA. Standby mode supply current is typically less than 10 µA. The AT27C020 is available in a choice of industry-standard JEDEC-approved one-time programmable (OTP) plastic PDIP, PLCC and TSOP packages. All devices feature two-line control (CE, OE) to give designers the flexibility to prevent bus contention. With 256K bytes storage capability, the AT27C020 allows firmware to be stored reliably and to be accessed by the system without the delays of mass storage media. Atmel’s AT27C020 has additional features to ensure high quality and efficient production.

This document describes the AT27C010 in detail. It is a low-power, high-performance 1,048,576-bit one-time programmable read-only memory (OTP EPROM) with a fast read access time, low power consumption, and high reliability

The AT27BV256 is a high-performance, low-power, low-voltage 262,144-bit one-time programmable read-only memory (OTP EPROM) organized as 32K by 8 bits. It requires only one supply in the range of 2.7V to 3.6V in normal read mode operation, making it ideal for fast, portable systems using either regulated or unregulated battery power. Atmel’s innovative design techniques provide fast speeds that rival 5V parts while keeping the low power consumption of a 3V supply. At VCC = 2.7V, any word can be accessed in less than 70 ns. With a typical power dissipation of only 18 mW at 5 MHz and VCC = 3V, the AT27BV256 consumes less than one fifth the power of a standard 5V EPROM. Standby mode supply current is typically less than 1

AT27BV1024 is a high-performance, low-power, low-voltage 1,048,576-bit one-time programmable read-only memory (OTP EPROM) organized as 64K by 16 bits. It requires only one supply in the range of 2.7V to 3.6V in normal read mode operation. The by-16 organization makes this part ideal for portable and handheld 16- and 32-bit microprocessor based systems using either regulated or unregulated battery power. Atmel’s innovative design techniques provide fast speeds that rival 5V parts while keeping the low power consumption of a 3V supply. At VCC = 2.7V, any word can be accessed in less than 120 ns. With a typical power dissipation of only 18 mW at 5MHz and VCC = 3V, the AT27BV1024 consumes less than one fifth the power of a standard 5V EPROM. Standby mode supply current is less than 1µA.

The AT27BV040 chip is a high performance, low power, low voltage, 4,194,304-bit one-time programmable read only memory (EPROM) organized as 512K by 8 bits. It requires only one supply in the range of 2.7 to 3.6V in normal read mode operation, making it ideal for fast, portable systems using either regulated or unregulated battery power. Atmel’s innovative design techniques provide fast speeds that rival 5V parts while keeping the low power consumption of a 3V supply. At VCC = 2.7V, any byte can be accessed in less than 100 ns. With a typical power dissipation of only 18 mW at 5 MHz and VCC = 3V, the AT27BV040 consumes less than one fifth the power of a standard 5V EPROM. Standby mode supply current is typically less than 1 µA.

Atmel AT27BV020 is a high-performance, low-power, low-voltage, 2,097,152-bit, one-time programmable, read-only memory (OTP EPROM) organized as 256K by 8 bits.

The AT27BV010 is a high-performance, low-power, low-voltage 1,048,576-bit one- time programmable read-only memory (OTP EPROM) organized as 128K by 8 bits. It requires only one supply in the range of 2.7V to 3.6V in normal read mode operation, making it ideal for fast, portable systems using either regulated or unregulated battery power. Atmel’s innovative design techniques provide fast speeds that rival 5V parts while keeping the low power consumption of a 3V supply. At VCC = 2.7V, any byte can be accessed in less than 90 ns. With a typical power draw of only 18 mW at 5 MHz and VCC = 3V, the AT27BV010 consumes less than one fifth the power of a standard 5V EPROM. Standby mode supply current is typically less than 1 µA at 3V.

The AT49F1024A is a 5-volt-only in-system Flash memory organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns with power dissipation of just 275 mW over the commercial temperature range. It features single-voltage operation, fast erase cycle time, hardware data protection, and is suitable for simple in-system reprogrammability.

AT29C040A is a 5V only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a low 220 mW power dissipation. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 5-volt only Flash family. To allow for simple in-system reprogrammability, the AT29C040A does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C040A is performed by internal address and data latches in a single cycle reprogram (erase and program).

The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read only memory (PEROM). It features fast read access time, sector program operation, internal program control and timer, hardware and software data protection, etc.

This document is a reliability data report for AT29C020 Programmable Read-Only Memory (PEROM), including dynamic operating life test, high temperature retention bake, cycle test, etc. The product is characterized by high reliability and stability.

This document introduces the software chip erase method of AT29 series flash, including the principle and steps of the method, and gives an example code.

Atmel Flash memories are programmable erasable read-only memories implemented on an advanced sub-micron process using a highly efficient memory cell. They use Fowler-Nordheim tunneling for erasing and programming, requiring low programming current and supporting sector programming. Compared to first generation Flash memories, they offer a cleaner hardware implementation and more flexible and simple programming commands.

This application note describes the design benefits of Atmel's AT29 Flash architecture as well as how the device ID feature is used to adjust for varying densities and supply voltages.