The AT45DB011B is a 1MB 2.7 volt only data flash ideally suited for a wide variety of digital voice, image, program code and data storage applications. Its 1,081,344 bits of memory are organized as 512 pages of 264 bytes each. In addition to the main memory, the AT45DB011B also contains one 264 byte SRAM data buffer. The buffer allows receiving of data while a page in the main memory is being reprogrammed. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step Read-Modify-Write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a single address line serial interface. The AT45DB011B supports single page and block erase operations.
The AT45DB011B is a 1‑Mbit serial DataFlash memory that operates from a single 2.7 V – 3.6 V supply and uses a standard SPI interface. It provides 512 pages of 264 bytes each, a 264‑byte SRAM buffer, and supports page‑program, block‑erase, and continuous read operations. The device is designed for low‑power applications, with a typical active read current of 4 mA and a standby current of 2 pA.
The datasheet describes the pin configuration, memory architecture, command set, timing specifications, and absolute maximum ratings. It also includes package dimensions for the 14‑lead TSSOP version and contact information for Atmel worldwide support.
| Supply Voltage | 2.7 V – 3.6 V |
|---|---|
| Maximum SPI Clock Frequency | 20 MHz |
| Memory Size | 1,081,344 bits (512 pages × 264 bytes) |
| SRAM Buffer Size | 264 bytes |
| Active Read Current (typical) | 4 mA |
| Standby Current (typical) | 2 pA |
| Page Program Time (typical) | 7 ms |
| Page‑to‑Buffer Transfer Time (typical) | 120 µs |
| Package Type | 14‑lead TSSOP (14x) |
It operates from a single 2.7 V to 3.6 V supply.
The device contains 512 pages, each 264 bytes long.
The maximum clock frequency is 20 MHz.
Typical active read current is 4 mA.