Siemens Manuals

BAT 15-020R is a Schottky diode produced by Silabs of Germany. Its maximum rated current is 50 mA, and its operating temperature range is -65℃ to +150℃. The package format is TO-220-3.

This document describes the features and characteristics of BAT 15- … D silicon Schottky diodes, including ESD sensitivity, maximum ratings, reverse voltage, junction temperature, forward current, and storage temperature range.

This document describes the features and characteristics of Silicon Schottky Diodes BAT 14- … 4 G, which are suitable for detector and mixer applications with frequencies up to 40 GHz.

BAT 14-099 is a low noise silicon dual Schottky diode, suitable for DBS mixer applications with operating frequencies up to 12 GHz.

The BAT14-098 is a silicon Schottky diode with a low noise figure and medium barrier type. It is suitable for DBS mixer applications with a working frequency of up to 12 GHz. The diode is packaged in a SOD-123 and can withstand a maximum of 90 mA of forward current and 4 V of reverse voltage.

BAT 14-03W is a silicon Schottky diode from BAT company. Its rated reverse voltage is 4 V, rated forward current is 90 mA, operating temperature range is -55 to 125 degrees Celsius, storage temperature range is -55 to 150 degrees Celsius, and maximum power dissipation is 100 mW.

The BAT 14- series are silicon Schottky diodes with a breakdown voltage of 4V and a forward current of 100 mA. They are available in SMD packages with a pointed cathode.

BAT 14-013 is a high performance silicon Schottky diode manufactured by Texas Instruments. It has a medium barrier and good linearity. The device is suitable for detector and mixer applications. It uses a hermetically sealed microwave package which can withstand high temperatures and humidity.

The BAT 114-099R is a silicon Schottky diode produced by the semiconductor company. Its maximum rating is IF = 90 mA, the operating temperature range is -55 to +150 °C, the storage temperature range is -55 to +150 °C, and the power dissipation is 100 mW. This diode has a high blocking voltage and is suitable for use in double balanced mixers, phase detectors and modulators.

This document introduces a semiconductor device - Silicon Dual Schottky Diode BAT 114-099. The device features a high barrier diode, suitable for applications such as balanced mixers, phase detectors, and modulators.

BFQ 82 is an NPN silicon RF transistor suitable for low-noise, high-gain amplifiers up to 2 GHz. It features linear broadband applications and a hermetically sealed ceramic package.

BFQ 81 is an NPN Silicon RF transistor suitable for low-noise amplifiers up to 2GHz and broadband analog and digital applications. It operates at collector currents ranging from 0.5mA to 20mA.