Samsung manuals, page 15
SAMSUNG K6T1008C2E Family CMOS SRAM Manual
This document describes the features and characteristics of the CMOS SRAM K6T1008C2E family, including the use of SAMSUNG's advanced CMOS process technology, support for various operating temperature ranges and package types, and low data retention voltage and current support.
Samsung K6T0808C1D Family handbook
K6T0808C1D Family CMOS SRAM is a low power static random access memory produced by Samsung Electronics. The family supports a wide range of operating temperatures and offers a variety of features, including low power consumption, high performance, high integration, and low cost.
SAMSUNG K4S161622D-TI/E CMOS SDRAM handbook
K4S161622D-TI/E is a 1Mx16 synchronous high data rate dynamic random access memory produced by Samsung. The product uses Samsung's high-performance CMOS technology, and has 3.3V power supply, LVTTL compatibility, multi-bank operation, MRS cycle, address key programming, burst length, burst type and other features.
Samsung 512Mb/256Mb 1.8V NAND Flash Errata Data Sheet
This document is the errata of 512Mb/256Mb 1.8V NAND Flash released by Samsung Electronics, Korea. It contains some AC characteristics not meeting the specification, improvement schedule and workaround.
Samsung LCD-Monitor 940Fn User Manual
This manual is a service manual for Fashion Feature LCD-Monitor Chassis LHA19PS Model 940Fn, which details the product's features, key functions, and usage instructions.
samsung 832BF LCD-Monitor service manual
This document is a service manual for Samsung's LPE19DS model monitor.
samsung KM29V64000TS/RS FLASH MEMORY handbook
Samsung KM681000E Family handbook
KM681000E is a low power CMOS static RAM produced by SAMSUNG. It supports various operating temperature ranges and has various packaging types for user flexibility in system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.
Samsung K4D64163HF handbook
K4D64163H is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
samsung DDR2 Unbuffered SODIMM Manual
This document is a specification sheet for Samsung 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC.
samsung SNV-5010 Manual
This document is the user manual for the SNV-5010 network camera, describing the features and characteristics of the product.
Samsung Semiconductor Laser (1)
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SAMSUNG MultiMediaCard Specification1
This document is a specification for MultiMediaCardTM. It includes the version history, ordering information, power consumption, operating characteristics, etc. This specification is applicable to Samsung Electronics' semiconductor flash memory products.
samsung K9F5608X0D handbook
The document introduces three flash memory products, including K9F5608R0DK9F5608D0D, K9F5608U0D, and K9F5608X0D. The document mentions the specifications and characteristics of these three products and states that they are subject to change. Additionally, the document emphasizes that these products are not intended for use in life support, medical, and military applications.
samsung KM681000B Family handbook
The KM681000B family is a 0.6-micron CMOS process technology-based, low-power CMOS static random access memory that supports various operating temperature ranges and has multiple package types for flexible system design. The series also supports low data retention voltage and low standby current for battery back-up operation.