SAMSUNG Manuals

This document introduces the features and characteristics of K4S513233F, including power supply voltage, interface compatibility, operating frequency, operating temperature, etc.

K4S51163PF-Y(P)F is a synchronous high data rate dynamic memory produced by Samsung. The organization is 4 x 8,388,608 words by 16 bits, with programmable burst lengths and programmable latencies, suitable for various high bandwidth and high performance memory system applications.

The K4S51163PF is a high-performance dynamic random-access memory device manufactured by Samsung. It features a synchronous design that allows precise cycle control with the use of the system clock, and I/O transactions are possible on every clock cycle. The device's range of operating frequencies, programmable burst lengths, and programmable latencies make it suitable for a variety of high-bandwidth and high-performance memory system applications.

K4S51153LF is a mobile SDRAM with voltage options of 2.5V/2.5V or 2.5V/1.8V. It is compatible with LVCMOS and multiplexed address. The product has four banks and supports MRS and EMRS cycles with address key programs. It also has special function support including Partial Array Self Refresh and Temperature Compensated Self Refresh. Other features include masking with DQM, auto refresh, and a 64ms refresh period. The product operates in commercial temperature range (-25°C to 70°C) and comes in a 2Chips DDP 54Balls FBGA package.

K4S511633F-Y(P)C/L/F is a 536,870,912 bit synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. It has range of operating frequencies, programmable burst length and programmable latencies, which make it suitable for a variety of high bandwidth, high performance memory system applications.

The K4S511633F is a high-performance CMOS dynamic random access memory produced by Samsung. It uses a synchronous design that allows precise timing control and supports a variety of high-bandwidth, high-performance memory system applications. This device has multiple operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for use in a variety of applications.

K4S511633C-YL/N/P is a 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM, powered by 3.0V, LVCMOS compatible with multiplexed address, supports four-bank operation, MRS cycle with address key programming.

The K4S511633C-YL/N/P is a 3.0V power supply 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control, with four banks operation, MRS cycle with address key programs, burst length, burst type and all inputs sampled at the positive going edge of the system clock.

The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technol- ogy.

This user manual contains detailed instructions on how to use the camera. Read this manual carefully before using the camera. This manual contains the following: Frequently Asked Questions, Quick Reference, Table of Contents, Basic Functions, Extended Functions, Shooting Options, Playback/Editing, Wireless Network (DV300F/DV305F), Settings, Appendix.

This document describes the features and characteristics of K4S511632M CMOS SDRAM, including its capacity, organization, operating frequency range, timing control, and power supply.

This document is the user manual for SCH-i889, which describes the features and characteristics of this Samsung mobile device, as well as the safety precautions before use.

The K4S64323LF-S(D)N/U/P is a mobile SDRAM memory product from Samsung Electronics. It is powered by a 2.5V supply and features four banks with multiple timing configurations. It is suitable for a variety of high bandwidth and high performance memory system applications.

K4S64323LF-S(D)G/S is a 2Mx32-bit synchronous high data rate dynamic random access memory (DRAM) manufactured by Samsung. It operates at a voltage of 2.5V and is packaged in a 90-ball FBGA package. The device features a variety of programmable functions, including CAS latency, burst length, and burst type, making it suitable for a variety of high-bandwidth and high-performance memory system applications.

The K4S643233H is a high-performance synchronous dynamic random access memory (SDRAM) manufactured by Samsung. It can operate in a temperature range of -25°C to 85°C. The device has a variety of programmable features, such as operating frequency, burst length, and latency, which make it suitable for use in a variety of high-bandwidth and high-performance memory system applications.