ROHM Manuals - Page 52

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ROHM manuals, page 52

  • ROHM US6M1 Manual

    US6M1 Transistors Rev.B is a silicon N-channel / P-channel MOSFET with low on-resistance, built-in G-S protection diode, and small surface mount package (TUMT6). It is suitable for power switching and DC/DC converter applications.

  • ROHM US6M2 Manual

    US6M2 Nch+Pch MOSFET is a dual-channel MOSFET with low voltage drive, high switching speed and low on-resistance.

  • ROHM US5U1 Data Sheet

    US5U1 Nch+SBD MOSFET is a low voltage drive MOSFET device launched by ON Semiconductor. It has the characteristics of high switching speed, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switch power supply application.

  • ROHM US5U2 Data Sheet

    This document describes the features and characteristics of the US5U2 Transistors Rev.B 1/4 4V Drive Nch+SBD MOSFET, including high-speed switching, low on-resistance, 4V drive, and built-in low VF Schottky barrier diode.

  • ROHM US5U3 Manual

    US5U3 is a high-voltage, low-voltage drive, low-voltage drop, high-switching frequency Nch+SBD MOSFET device. The device is packaged in TUMT5 and has a built-in low VF Schottky diode. It can be widely used in switch power supplies, DC/DC converters, LED drivers, motor drivers and other fields.

  • ROHM US5U38 Manual

    US5U38 Transistor is a product that combines a silicon P-channel MOSFET with a Schottky barrier diode. It features low on-resistance, fast switching, and low voltage drive (2.5V). It is suitable for switching applications.

  • ROHM US6U37 Manual

    The US6U37 is a 2.5V drive Nch+SBD MOSFET, which has the features of high-speed switching, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switching applications.

  • ROHM UMX21N Manual

    UMX21N is a dual transistor produced by ROHM. Its features are very low output on resistance and low capacitance.

  • ROHM US6T8 Manual

    US6T8 is a general-purpose amplifier suitable for low-frequency amplification and driver applications. Its features include: 1) Large collector current; 2) Low collector saturation voltage.

  • ROHM US6T9 Manual

    US6T9 is a low frequency amplifier driver from ROHM, featuring large collector current and low collector saturation voltage.

  • ROHM US6X7 Manual

    The US6X7 is a NPN type general purpose amplifier from ROHM, with a maximum collector current of 1.5A and a low collector-emitter saturation voltage of only 200mV.

  • ROHM US6X8 Manual

    US6X8 Transistors Rev.C is a general-purpose amplifier suitable for low-frequency amplification. It has a large collector current and low collector saturation voltage. The dimensions are ROHM: TUMT6, abbreviated symbol X08. The maximum operating temperature is 150°C.

  • ROHM UMF6N Manual

    This document describes the features and characteristics of UMF6N Transistors Rev.B 1/5 Power Management circuit, which includes dual transistors 2SA2018 and 2SK3019 housed independently in a UMT package.

  • ROHM UMF9N Manual

    UMF9N is a dual transistor power management chip launched by ROHM, with a UMT6 package that is compatible with the EIAJ SC-88 standard. The chip is manufactured using Si single crystal planar technology, with wide input and output voltage range and low power consumption. It is suitable for various power management circuits.

  • ROHM UMF28N Manual

    UMF28N is a power management circuit with dual transistors 2SA1774 and DTC124XE housed in a UMT package. It features a power switching circuit and compact packaging, which helps to reduce mounting cost and area.