ROHM manuals, page 51
ROHM US6T5 Data Sheet (1)
US6T5 is a low frequency amplifier with a large collector current and a low collector-emitter saturation voltage
ROHM US6T6 Data Sheet
This document describes the features and characteristics of the US6T6 transistor, which is primarily used as a low-frequency amplifier driver. The transistor has a large collector current and a low collector-emitter saturation voltage.
ROHM US6T7 Manual
The document is about the US6T7 transistor. The US6T7 is a low-frequency amplifier suitable for driving low-frequency amplifiers. Its features include a large collector current and a maximum VCE(sat) of -370mV at IC = -1A / IB = -50mA.
ROHM US6X3 Manual
ROHM US6X4 Manual
US6X4 is a low frequency amplifier with a maximum collector current of 2A.
ROHM US6T5 Data Sheet
US6X5 is a low frequency power transistor produced by ROHM, with a maximum collector current of 2A and a minimum saturation voltage of 370mV.
ROHM US6X6 Manual
This document describes the features and characteristics of the US6X6 Transistors Rev.B 1/2 low frequency amplifier, including large collector current and a maximum saturation voltage of 350mV.
ROHM UM6J1N Manual
This document describes the features and characteristics of the 4V Drive Pch MOSFET UM6J1N from ROHM Co., Ltd., including the independence of the two RSU002P03 transistors in a single UMT package and the reduction in mounting cost and area.
ROHM UM6K34N Manual
UM6K34N is a low cost, low power Nch+Nch MOSFET ideal for portable applications.
ROHM UM6K33N handbook
This document describes the features and characteristics of ROHM's UM6K33N MOSFET product, including high-speed switching, small package, and ultra-low voltage drive.
ROHM US6J11 Data Sheet
ROHM US6K1 Manual
US6K1 is a N-channel MOSFET produced by ROHM company. It has the characteristics of low voltage drive, small package and low on-resistance.
ROHM US6K2 Data Sheet
US6K2 is a 4V Drive Nch+Nch MOSFET that features high-speed switching and low On-resistance.
ROHM US6K4 Manual
US6K4 is a 1.8V drive Nch+Nch MOSFET produced by Toshiba, which has the characteristics of high-speed switching, low on-resistance and is suitable for switching applications.
ROHM US6M11 Manual
This document describes the features and characteristics of ROHM's 1.5V Drive Nch+Pch MOSFET, including low on-resistance, low voltage drive, and built-in G-S protection diode. It is suitable for applications such as internal circuit switching.