This document describes the features and characteristics of the 2.5V drive Nch MOSFET QS8K2 produced by ROHM, including low on-resistance, high power package, and 2.5V drive.
This document is a datasheet for the ROHM QS8M13 4V Drive Nch + Pch MOSFET. The MOSFET features low on-resistance, high power package, and low voltage drive, making it suitable for switching applications.
The QS5U16 is a transistor that combines an Nch MOSFET with a Schottky barrier diode. It features low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for applications such as load switches and DC/DC conversion.
QS5U17 is a 2.5V drive Nch+SBD MOS FET with low on-state resistance, fast switching, low voltage drive (2.5V), and is widely used in load switching and DC/DC conversion.
QS5U21 is a 2.5V drive Pch+SBD MOS FET. The device has low on-state resistance and fast switching characteristics, built-in schottky barrier diode, low forward voltage, suitable for load switch and DC/DC conversion applications.
QS5U26 Transistor Rev.B is a Pch+ SBD MOSFET with features including low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for switching applications.
The QS5U27 is a 2.5V drive Pch+SBD MOS FET with low voltage drive, low on-state resistance, fast switching, and a built-in Schottky diode. It is used in load switching, DC/DC conversion and other applications.
The QS5U28 is a low voltage drive Pch+SBD MOS FET with low switching loss and low forward voltage, which is suitable for load switch and DC/DC conversion applications.
QS5U33 is a 4V drive Pch+SBD MOSFET, which has low voltage drive, low on-state resistance and fast switching. It is suitable for load switch and DC/DC conversion applications.
