QSX6 is a low frequency amplifier with large collector current and low VCE(sat). It is suitable for applications such as low frequency amplifiers and drivers.
This data sheet introduces the characteristics of the QS6K21 product, including package, external dimensions, maximum working voltage, maximum current, and maximum power
QS6M3 is a Nch+Pch MOSFET produced by Toshiba. Its features are low on-resistance, built-in G-S protection diode, and TSMT6 package. This product is suitable for applications such as power switching and DC/DC converters.
This document describes the features and characteristics of the 1.5V Drive Pch + Pch MOSFET QS8J12 from ROHM, including low on-resistance, small high power package, and low voltage drive.
QS8J5 is a Pch + Pch MOSFET produced by ROHM. It has low on-resistance, high power package, low voltage drive, and is suitable for switching applications.
QS8K13 is a low-voltage drive Nch + Nch MOSFET produced by ROHM, with low on-resistance, high power package, low voltage drive and other features, suitable for switching applications.
