EMX1 / UMX1N / IMX1 is a NPN dual transistor produced by ROHM. It is packaged in an EMT or UMT or SMT package. It has the following features: Two 2SC2412K chips in an EMT or UMT or SMT package, which can be mounted using EMT3 or UMT3 or SMT3 automatic mounting machines. The transistor elements are independent, eliminating mutual interference. Installation cost and area can be halved.
This document describes the external dimensions, features, and characteristics of a dual transistor product IMX17. The product features two 2SD1484K chips that can be mounted using an SMT3 automatic mounting machine. The transistor elements are independent, eliminating interference. It has a high collector current. IC = 500mA. It can reduce mounting costs and area.
This document introduces the features and characteristics of the IMX25 general purpose dual transistor product launched by ROHM. The product has two 2SD2704K chips, and can be mounted using an SMT3 automatic mounting machine. The transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half.
EMX3/UMX3N/IMX3 is a dual transistor product launched by ROHM. It adopts EMT, UMT and SMT packaging forms, and has high reliability, high voltage, high frequency and other characteristics.
EMX4 / UMX4N / IMX4 are high frequency dual transistors produced by ROHM. Their maximum transition frequency can reach 1.5GHz and their output capacitance is only 0.9pF, which makes them show excellent performance in applications.
This datasheet provides the IMX8Transistors's specification information, including external dimensions, package, pin definition, polarity, absolute maximum ratings, electrical characteristics, transition frequency, etc.
IMX9 is a dual NPN transistor from ROHM. Its package is SMT6 and its rated power is 300mW (each element not exceeding 200mW). The maximum collector-emitter voltage is 20V, the maximum collector-base voltage is 25V, the maximum emitter-base voltage is 12V, the maximum collector current is 500mA, the junction temperature is 150โ and the storage temperature is -55~+150โ.
EMZ1 / UMZ1N / IMZ1A is a dual transistor produced by ROHM. It integrates two chips, 2SA1037AK and 2SC2412K, and is packaged in multiple types such as EMT, UMT, and SMT. It has the advantages of small size, low cost, and easy installation.
This document describes the features and characteristics of the EMZ2 / UMZ2N / IMZ2A dual transistors, including their equivalent circuits, absolute maximum ratings, package specifications, and external dimensions.
This document describes the features and characteristics of ROHM's EMB11 / UMB11N / IMB11A PNP -100mA -50V complex digital transistors (bias resistor built-in transistors). It has built-in biasing resistors, allowing the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing and eliminate parasitic effects. Only the on/off conditions need to be set for operation, making the circuit design easy.
RB160L-90 diode is a Schottky barrier diode manufactured by Rohm. It has low forward voltage drop and high reliability, and is suitable for general rectification applications.
This datasheet provides a detailed description of the features, applications, package size, typical electrical characteristics, packaging specifications, absolute maximum operating conditions, typical application circuits of EMB2/UMB2N/IMB2A.
