DTC115GUA / DTC115GKA is a digital transistor from ROHM that integrates bias resistors, which has the characteristics of high integration, low cost, and high reliability.
This document provides the parameters and specifications of QSZ2, including structure, dimensions, features, applications, package, equivalent circuit, etc.
This document describes the features and applications of the QSZ4 transistors, including low VCE(sat) and small package. The transistors have a silicon epitaxial planar structure. The QSZ4 model consists of two independent transistors and a diode, housed in a TSMT5 package.
QS5W2 is a NPN silicon epitaxial planar transistor with low saturation voltage and high switching speed. It is suitable for various switch power supplies and driving power supplies.
The document describes the features and characteristics of ROHM's medium power transistor QS5Y2, including low saturation voltage and high speed switching.
This document is the data sheet of QS6Z5 from ROHM Co., Ltd. QS6Z5 is a NPN/PNP silicon epitaxial planar transistor with low saturation voltage and high speed switching characteristics.
QS8F2 is a low-voltage drive Pch MOSFET+PNP TRANSISTOR produced by ROHM. It has the characteristics of low on-resistance, high power package, and low voltage drive. It is suitable for switching power supplies and other applications.
The UMT2907A / SST2907A / MMST2907A is ROHM's 1/4 PNP Medium Power Transistor (Switching). Its features are BVCEO< -60V (IC=-10mA) and it is a complement to the UMT2222A / SST2222A / MMST2222A.
UMT2222A / SST2222A / MMST2222A is an NPN medium power transistor used for switching applications. It has high voltage capability and complementary models.
This document describes the features and characteristics of the SST4403 / MMST4403 PNP Medium Power Transistor (Switching), including product features, absolute maximum ratings, packaging specifications, dimensions, and electrical characteristics.
