FUJI Manuals

2SK1183 N-Channel MOSFET Datasheet

2SK1179 is a N-channel MOSFET from Toshiba. It has a maximum voltage of 500V and a maximum current of 8.5A. The on-resistance is 0.70~0.85Ω and the switching speed is fast.

This document describes the absolute maximum ratings, electrical characteristics, and external dimensions of the 2SK1178 MOSFET model.

The document describes the absolute maximum ratings and electrical characteristics of an electronic product. The product is model 2SK1177, but the brand is not mentioned. It has a drain-source voltage of 500V and a drain current of 250µA. Additionally, it features a threshold voltage of 2.0-4.0V and a power dissipation of 30W.

This document describes the features and characteristics of the 2SK1098-M N-channel MOS-FET F-III Series product, including high current, low on-resistance, no secondary breakdown, low driving power, high forward transconductance, etc. It is suitable for applications such as motor control, general purpose power amplifier, and DC-DC converters.

2SK1088-M is a N-channel MOS-FET manufactured by FUJITSU. Its features are high current, low on-resistance, no secondary breakdown, low driving power and high forward transconductance. This device is suitable for motor control, general purpose power amplifier and DC-DC converters applications.

2SK1083-MR is a N-channel MOS-FET with high current, low on-resistance, no secondary breakdown, low drive power, and high forward transconductance. It is suitable for motor control, general purpose power amplifier, DC-DC converters and other applications.