FUJI Manuals

This document is the specification of 6MBI15S-120-50, which describes the appearance size, isolation voltage, maximum current, maximum power, maximum voltage and other technical parameters of the product

MS5F6577 is an IGBT MODULE.

2MBI450U4N-120-50 MS5F6507 is an IGBT module produced by Fuji Electric.

This document is a specification for IGBT MODULE 2MBI300U4N-120-50 MS5F6509. The product is RoHS compliant and has features such as thermal resistance, screw torque, and temperature characteristics.

This is a specification for the MS5F6508 module, which lists its features and parameters in detail

This document describes the specifications and characteristics of the IGBT module with model number 2MBI400U4H-120.

This is a user manual of a FUJIFILM digital camera, which mainly introduces basic shooting and playback functions of the camera

The document is a declaration of conformity for the Foxconn brand 915PL7AE V1.0 P/N:91-181-C15-A5-0C 915PL7AE motherboard. It states that the product complies with relevant specifications and describes the features and characteristics of the product.

This document describes the features and characteristics of the 2SK2640-01MR N-channel MOS-FET FAP-IIS Series 500V 0.9Ω 10A 50W, including high-speed switching, low on-resistance, no secondary breakdown, low driving power, and high voltage. It is suitable for applications such as switching regulators, UPS, DC-DC converters, and general-purpose power amplifiers.

2SK2640-01MR is a N-channel MOS-FET produced by Dinghao Semiconductor. It has the characteristics of high switching speed, low on-resistance, no secondary breakdown, low driving power, high voltage, etc. It is used in switching regulators, UPS, DC-DC converters and general purpose power amplifiers.

This document describes the features and characteristics of the 2SK2639-01 N-channel MOS-FET FAP-IIS Series product, including high-speed switching, low on-resistance, no secondary breakdown, low driving power, and high voltage.

2SK2638-01MR is a N-channel MOS-FET from Dinghao Electronics. It features high switching speed, low on-resistance, no secondary breakdown, low driving power, high voltage, VGS = ± 30V guaranteed, repetitive avalanche rated, and is suitable for switching regulators, UPS, DC-DC converters, and general purpose power amplifiers.

2SK2638-01MR is a N-channel MOS-FET FAP-IIS Series with a maximum voltage of 450V, current of 10A, and power of 50W. It features high-speed switching, low on-resistance, no secondary breakdown, low driving power, high voltage, VGS = ±30V guarantee, and repetitive avalanche rating. It can be used for switching regulators, UPS, DC-DC converters and general purpose power amplifiers.