L2FET is a 5V gate-driven power MOSFET that is compatible with a 5V power supply for use in logic circuitry. L2FETs retain the on resistance, drain current, and blocking voltage ratings of their 10V predecessors, but operate from a much less costly 5V supply. The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard 100nm to 50nm (500Å). Since the surface inversion of the MOS channel is determined by the gate insulator voltage field, halving the insulator thickness halves the required gate voltage to achieve the same surface inversion, thereby not compromising drain characteristics.