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FQPF9P25 is a 250V P-channel MOSFET. It features low gate charge (typical 29 nC), low Crss (typical 27 pF), fast switching, 100% avalanche tested and improved dv/dt capability.
This document is an introduction to the FQS4410 QFET product from Fairchild Semiconductor International. The product is a single-channel N-channel enhancement mode power field effect transistor with low resistance, excellent switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as DC/DC converters and portable battery-operated products.
The FQS4900 is a dual N and P-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high interface in telephone sets.
This document describes the FQS4900 QFET series N and P-channel enhancement mode power field effect transistors produced by Fairchild Semiconductor International. This series of products adopts advanced DMOS technology, with low on-state resistance, excellent switching performance, and the ability to withstand high energy pulses. Suitable for high interface applications such as telephones.
This document is about Dinghao's stock inventory, technical information, encyclopedia information, and hot news. The document mentions QFET products and describes their features.
This is a document about FQT13N06 60V N-Channel MOSFET, which describes the features and characteristics of the product, including low voltage applications, low on-state resistance, and high efficiency.
FQT13N06L is a 60V LOGIC N-Channel MOSFET from Fairchild Semiconductor. It features low on-state resistance, superior switching performance, high energy pulse withstand capability in the avalanche and commutation mode, and improved dv/dt capability.
FQT2P25 is a 250V P-Channel MOSFET produced using Fairchild's proprietary DMOS technology. This device features low on-state resistance, superior switching performance, and high energy pulse withstand in avalanche and commutation mode. It is well suited for high efficiency switching DC/DC converters.
FQT2P25 is a 250V P-Channel MOSFET produced using Fairchild's proprietary DMOS technology. This device features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it well suited for high efficiency switching DC/DC converters.
FQT3P20 is a 200V P-channel MOSFET with low on-state resistance, high switching speed, low gate charge and low Crss, suitable for high efficiency switching DC/DC converters.
This document describes the features and characteristics of the FQT3P20, a 200V P-Channel MOSFET power field effect transistor. It has low on-state resistance, superior switching performance, and the ability to withstand high energy pulses.
