Fairchild Manuals

The FQT4N20 is a 200V N-Channel enhancement mode power field effect transistor produced by Fairchild using their proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control and other applications.

FQT7N10L is a 100V logic N-Channel MOSFET produced by Fairchild. Its features are RDS(on) = 0.35Ω @VGS = 10 V, low gate charge (typical 4.6 nC), low Crss (typical 12 pF), fast switching, improved dv/dt capability, low level gate drive requirements allowing direct operation from logic drives.

FQT7N10 is a 100V N-Channel MOSFET from Fairchild Semiconductor. The device has a continuous current of 1.7A and a maximum drain-source voltage of 100V. It features low on-state resistance, low gate charge, fast switching and improved dv/dt capability. The device is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control.

FQT7N10 is a 1.7A, 100V N-channel MOSFET that uses Fairchild's proprietary planar stripe DMOS technology. It has the characteristics of low on-state resistance, high switching speed and high anti-surge capability. This device is very suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

FQT5P10 is a P-channel MOSFET produced by Fairchild. Its features include low on-state resistance, high efficiency switching performance and high energy pulse tolerance. Suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters and DC motor control

FQT5P10 is a P-Channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. This device has low on-state resistance, superior switching performance, and can withstand high energy pulses. It is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

This document describes the features and characteristics of FQT5N20 QFET TM FQT5N20 200V N-Channel MOSFET, including low on-state resistance, fast switching, and high energy pulse withstand capability.

FQT4N25 is an N-channel enhancement mode power field effect transistor manufactured by Philips using Philips' proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse, and is suitable for high efficiency switching DC/DC converters and switch mode power supplies.

FQT4N25 is a 250V N-channel MOSFET produced by Fairchild. It features low on-state resistance, low gate charge, low reverse capacitance, and is suitable for high-efficiency switching DC/DC converters and switch mode power supplies.

FQT4N20L is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This transistor uses Fairchild's proprietary planar stripe DMOS technology, which is specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.

The FQT4N20L QFET is a 200V LOGIC N-Channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. It features low RDson, high switching speed, 100% avalanche testing, improved dv/dt capability, and low level gate drive requirements.

FQT4N20 is a 200V N-channel MOSFET with low on-resistance, low gate charge, low Crss, and fast switching performance. It is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control and other applications.

This document describes the FQPF1N60 product from Fairchild Semiconductor International. It is a 600V N-Channel MOSFET power field effect transistor. The product is produced using advanced DMOS technology, featuring low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switch mode power supplies.

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