Fairchild Manuals

This is a PDF file about QFET. QFET is a kind of field effect transistor.

The document provides information about the inventory, technical data, encyclopedic information, and hot news of QFET products. These products are characterized by high performance, strong reliability, and versatility.

QFET QFET QFET QFET is a brand of Dinghao Electronics Co., Ltd., providing QFET QFET QFET QFET's inventory, technical data, encyclopedia information, hot news and so on

FQP9N25C/FQPF9N25C is a N-Channel enhancement mode power field effect transistor produced by Fairchild. It features low RDS(on), low Crss, fast switching and 100% avalanche testing. It is suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

FQP9N25C/FQPF9N25C QFET ® N-Channel MOSFET is a high performance power field effect transistor produced by Fairchild. It features low on-state resistance, fast switching and high dv/dt capability. This device is suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC inverters and uninterruptible power supplies.

The FQPF9N30 is a 300V N-channel MOSFET with a rated current of 6.0A and a switching resistance of 0.45 ohms, making it ideal for high-efficiency switching DC/DC converters and switch-mode power supplies.

FQPF9N30 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The transistor uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse endurance. It is suitable for high-efficiency switching DC/DC converters and switch mode power supplies.

QFET QFET QFET QFET is a product of DINGHAO.

This article introduces the product characteristics and model information of Dinghao Electronics QFET series

FQP9N50C/FQPF9N50C QFET 500V N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

The datasheet provides detailed information about the FQPF9N50CF product, including product model, package, pin, maximum voltage, current, power, and temperature.

FQPF9N50CF is a 500V N-Channel MOSFET with features including 9A current, 0.85Ω RDS(on), low gate charge, fast switching, 100% avalanche tested, etc.

This document describes the features and characteristics of Fairchild Semiconductor Corporation's FQP9N90C/FQPF9N90C QFET TM 900V N-Channel MOSFET, including low on-state resistance, superior switching performance, and high energy pulse withstand capability. This product is particularly suitable for high efficiency switched mode power supplies.