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FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQPF8N60CF 600V N-Channel MOSFET is a low on-state resistance, low gate charge, fast switching, 100% avalanche tested product produced by Fairchild Semiconductor Corporation. It is suitable for high efficiency switched mode power supplies, active power factor correction, and half bridge topology electronic lamp ballasts.
FQPF8N60CF 600V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It has the advantages of low on-state resistance, high switching speed, high reliability, etc. This product is suitable for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
This document describes the features and characteristics of the FQP8N80C/FQPF8N80C, an 800V N-Channel MOSFET, including low on-state resistance, fast switching speed, and high energy pulse capability.
FQP8N90C/FQPF8N90C N-Channel MOSFET is produced by Fairchild using DMOS technology. The features are low on-state resistance, fast switching, 100% avalanche tested, improved dv/dt capability.
FQPF8P10 is a 100V P-channel MOSFET with low gate charge (typical 12 nC), low Crss (typical 30 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
FQPF90N08 is a N-channel MOSFET manufactured by Fairchild Semiconductor. It has a maximum voltage of 80V and a maximum current of 44A. This device features low on-state resistance, high switching speed, high surge capability, etc., and is suitable for low-voltage applications such as automotive, DC/DC converters and DC motor control.
This data sheet introduces the features and characteristics of FAIRCHILD FQPF90N08 80V N-Channel MOSFET, including operating voltage, operating current, switching speed, junction temperature, etc.
FQPF9N08 is an 80V N-Channel MOSFET produced by Fairchild Semiconductor International. It uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance and high energy pulse endurance. This device is suitable for low voltage applications such as automotive, high efficiency switching for DC/DC converters and DC motor control.
This document describes the features and characteristics of the FQPF9N08 80V N-Channel MOSFET, which is suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
This document describes the features and characteristics of the Fairchild FQPF9N08L, an 80V logic N-channel MOSFET. The product features low on-state resistance, fast switching, low gate charge, low Crss, and improved dv/dt capability. It is suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
