Fairchild Manuals (Industrial)

This is a PDF file about BC807/BC808, introducing its electrical characteristics, absolute maximum ratings, application scenarios and other information.

File format: PDF Size:73 KB

BC817/BC818 NPN Epitaxial Silicon Transistor is a device suitable for AF-Driver stages and low power output stages for switching and amplifier applications.

File format: PDF Size:161 KB

BC846 - BC850 are NPN epitaxial silicon transistors suitable for switching and amplifier applications. They are suitable for automatic insertion in thick- and thin-film circuits. BC849 and BC850 are low noise. They complement the BC856 and BC860.

File format: PDF Size:137 KB

BC847BS is a NPN Multi-chip General Purpose Amplifier produced by Fairchild Semiconductor Corporation. It can be applied to general purpose amplifier applications at collector currents up to 200 mA

File format: PDF Size:194 KB

This document describes an NPN multi-chip general purpose amplifier device, designed for general purpose amplifier applications with a maximum collector current of 200mA. The device features a wide operating temperature range of -55°C to +150°C, and has high collector-emitter voltage and collector-base voltage.

File format: PDF Size:52 KB

This document describes the features and characteristics of the BC856-BC860 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. It is suitable for switching and amplifier applications, can be automatically inserted in thick and thin-film circuits, and has low noise. It is complementary to BC846.

File format: PDF Size:145 KB

BC857S is a PNP multi-chip general purpose amplifier produced by FAIRCHILD SEMICONDUCTOR CORPORATION. Its maximum collector current is 200mA and its rated values are VCEO 45V, VCES 50V, VCBO 50V, VEBO 5.0V, and TJ 150°C

File format: PDF Size:51 KB

BCP51 is an NPN transistor with a maximum collector voltage of -45V, a maximum collector-emitter voltage of -45V, a maximum collector-base voltage of -45V, a maximum emitter-base voltage of -5V and a maximum collector current of -1.5A. Its operating temperature range is -55~150 degrees

File format: PDF Size:39 KB

This document describes the absolute maximum ratings and thermal characteristics of the BCP52 PNP general purpose amplifier. The device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents up to 1.0A.

File format: PDF Size:258 KB

The BCP53 is a PNP general purpose amplifier manufactured by Fairchild Semiconductor Corporation. This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A.

File format: PDF Size:52 KB

This document describes the absolute maximum ratings and thermal characteristics of the BCP54 NPN general purpose amplifier. This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents up to 1.2A.

File format: PDF Size:203 KB

The BCP55 is a NPN general purpose amplifier manufactured by Fairchild Semiconductor Corporation. It is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A.

File format: PDF Size:51 KB

File format: PDF Size:0 KB

BCP68 is an NPN general purpose amplifier designed for medium power amplifiers. It has a collector-emitter voltage of 20V and a collector current of 1A. Additionally, it has low saturation voltage and base-emitter voltage.

File format: PDF Size:36 KB

The BCP69 is a PNP general purpose amplifier designed for medium power amplifiers and switches with a maximum collector current of 1.0A. It features a collector-emitter voltage of -20V and a collector-base voltage of -30V.

File format: PDF Size:118 KB

BCV71 is a diode produced by Fairchild Semiconductor Corporation. Its characteristics include: maximum collector-emitter voltage of 60V, maximum collector-base voltage of 80V, maximum emitter-base voltage of 5.0V, maximum collector current of 500mA, and operating and storage temperature range of -55~+150°C.

File format: PDF Size:47 KB

This document is the absolute maximum ratings of BCV72, including electrical characteristics, thermal characteristics, test conditions, etc.

File format: PDF Size:47 KB

BCW61A/B/C/D is a PNP type transistor from FAIRCHILD, with a maximum power of 350mW, a maximum voltage of -32V and a maximum current of -100mA

File format: PDF Size:47 KB

BCW66G is a NPN transistor manufactured by Fairchild Semiconductor. It has a maximum collector current of 1 A, a maximum collector-emitter voltage of 45 V, a maximum collector-base voltage of 75 V, and a maximum emitter-base voltage of 5 V.

File format: PDF Size:47 KB

The BCW68G is a device designed for general purpose amplifier and switching applications at currents up to 500 mA.

File format: PDF Size:231 KB