Fairchild Manuals (Industrial)

The MMBT3904T is an NPN type transistor produced by Fairchild Semiconductor Corporation. It is suitable for general amplification, switching and amplification applications.

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This document describes the features and characteristics of the MMBT3906SL PNP epitaxial silicon transistor, which is suitable for general amplification and switching applications, especially for portable devices. It is recommended to use it in conjunction with the complementary NPN model MMBT3904SL.

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D45C8 is a PNP power amplifier with a collector-emitter voltage of -60V and a collector current of -4.0A.

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D45H2A is a PNP power amplifier designed for power amplifier, regulator and switching circuits where speed is important.

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This is the datasheet of FFB5551

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FJMA790 is a PNP epitaxial silicon transistor for load management in portable applications. It features high collector current and low collector-emitter saturation voltage.

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FJT44 is a high voltage NPN type transistor. Its features are: 1. Collector-Emitter voltage range is 400V. 2. Collector-Emitter current range is 300mA. 3. Working temperature range is -55 to +150°C.

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This document describes the absolute maximum ratings and electrical characteristics of the FJV1845 NPN epitaxial silicon transistor. The transistor has a collector-base voltage and collector-emitter voltage of up to 120V, and a maximum collector current of 50mA. Additionally, the transistor features high gain and low saturation voltage.

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FJV42 is a NPN high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 350V, maximum collector-emitter current is 500mA, maximum collector-base current is 100uA, maximum emitter-base voltage is 6V, and maximum collector power dissipation is 350mW.

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The FJV992 is a PNP type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -120V, maximum collector-base voltage is -120V, maximum emitter-base voltage is -5V, maximum collector current is -50mA, maximum collector power dissipation is 300mW, maximum junction temperature is 150°C, and maximum storage temperature is -55~150°C.

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FJX1182 is a low frequency power amplifier produced by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is -35V, maximum collector-emitter voltage is -30V, maximum emitter-base voltage is -5V, maximum collector current is -500mA, maximum collector power dissipation is 150mW, and maximum junction temperature is 150°C. The storage temperature range is -55~150°C.

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FJX2222A — NPN Epitaxial Silicon Transistor is a 600 mA NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor. It has a maximum collector-emitter voltage of 40V and a maximum collector power dissipation of 325 mW.

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FJX2907A is a PNP type transistor produced by Fairchild Semiconductor. Its maximum collector-emitter voltage is -60V, maximum collector-base voltage is -60V, maximum emitter-base voltage is -5V, maximum collector current is -600mA, maximum collector power dissipation is 325mW, and maximum storage temperature is 150°C.

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FJX3904 is an NPN epitaxial silicon transistor used for general purposes. It has a collector-base voltage of 60V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. It also has a collector current of 200mA and collector power dissipation of 350mW.

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This document describes the absolute maximum ratings and electrical characteristics of the FJX3906 PNP epitaxial silicon transistor. It provides the maximum rated values for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector power dissipation, and storage temperature. In addition, it provides the electrical characteristics for collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, collector cut-off current, DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, current gain bandwidth product, output capacitance, noise figure, turn on time, and turn off time.

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This document describes the absolute maximum ratings and electrical characteristics of the FJX733 PNP epitaxial silicon transistor, including voltage, current, power, etc. The transistor is suitable for low frequency amplifier applications.

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FJX945 is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. It has the characteristics of high collector-base voltage VCBO=60V and high current gain bandwidth product fT=300MHz (typ).

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This product is a PNP audio frequency low noise amplifier with high voltage and high hFE.

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This document is the FMB100 spec, which introduces the characteristics and parameters of the product

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FMBA06 is a NPN multi-chip general purpose amplifier produced by Fairchild Semiconductor. Its absolute maximum ratings are: collector-emitter voltage is 80V, collector-base voltage is 80V, emitter-base voltage is 4.0V, collector current is 500mA, and working temperature range is -55 to +150°C.

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