Fairchild Manuals (Industrial)

FMBA14 is a NPN Multi-Chip Darlington Transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 30V, maximum collector-base voltage is 30V, maximum emitter-base voltage is 10V, maximum collector current is 1.2A, and operating temperature range is -55 to +150 degrees C.

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FMBM5401 PNP General Purpose Amplifier is a product of Fairchild Semiconductor Corporation. The maximum collector-emitter voltage is -150 V, the maximum collector-base voltage is -160 V, the maximum emitter-base voltage is -5.0 V, and the maximum collector current is -600 mA. The operating temperature range is -55 ~ 150 °C.

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FMBM5551 NPN General Purpose Amplifier is a dual NPN transistor from Fairchild Semiconductor Corporation. Its maximum power dissipation is 350mW, maximum collector-emitter voltage is 160V, maximum collector-base voltage is 180V, maximum emitter-base voltage is 6V, maximum collector current is 600mA.

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FMBS2383 is an NPN Epitaxial Silicon Transistor with Power Amplifier features. Its maximum collector-emitter voltage is 160V and maximum frequency gain bandwidth product is 120MHz.

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FMMT449 NPN Low Saturation Transistor is a high current gain, low saturation voltage NPN transistor from Fairchild. The device has a maximum collector current of 2A continuous and a maximum collector-emitter voltage of 50V.

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FMMT549 is a PNP low saturation transistor produced by Fairchild Semiconductor Corporation. It features high current gain and low saturation voltage, with collector currents up to 2A.

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This document is about the characteristics of FSB560/FSB560A NPN Low Saturation Transistor. The device has a high current gain and low saturation voltage, and the collector current can reach 2A.

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This datasheet lists the absolute maximum ratings, thermal characteristics, small signal characteristics and other information for the FSB619 NPN Low Saturation Transistor.

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The FSB649 SuperSOTTM-3 is an NPN low saturation transistor designed with high current gain and low saturation voltage, capable of continuous collector currents up to 3A.

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FSB660 / FSB660A are PNP low saturation transistors designed with high current gain and low saturation voltage, with a continuous collector current of up to 2A.

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The FSB749 is a PNP low saturation transistor from Fairchild Semiconductor Corporation. It has high current gain and low saturation voltage, and its collector current can reach 3A.

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FZT3019 is an NPN general purpose amplifier designed for medium power amplifiers and switches, with a maximum collector current of 500mA and a maximum collector voltage of 80V.

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FZT649 is a NPN low saturation transistor produced by Fairchild Semiconductor Corporation, with high current gain and low saturation voltage, the collector current can reach 3A continuous

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This document describes the features and characteristics of the FZT749 PNP Low Saturation Transistor, released in July 1998, including high current gain, low saturation voltage, and continuous collector currents up to 3A.

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KSA1015 is a PNP type silicon transistor produced by Fairchild Semiconductor. Its maximum collector-emitter voltage is -50V, maximum collector-emitter reverse voltage is -50V, maximum collector-base reverse voltage is -5V, maximum collector current is -150mA, maximum base current is -50mA, maximum collector power dissipation is 400mW, maximum junction temperature is 125℃, minimum storage temperature is -65℃, and maximum storage temperature is 150℃.

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This document presents the absolute maximum ratings and electrical characteristics of the KSA1182 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. The transistor is suitable for low-frequency power amplifiers and complements the KSC2859. The document provides information on the transistor's maximum rated voltage, maximum power dissipation, junction temperature, and storage temperature, among others. Typical curves for static characteristics, DC current gain, base-emitter saturation voltage, and collector output capacitance are also included.

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KSA1281 is an audio power amplifier with a collector power dissipation of 1W and a 3 watt output application. The absolute maximum ratings include collector power dissipation, junction temperature, storage temperature, etc. The electrical characteristics include collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, collector cut-off current, emitter cut-off current, DC current gain, base-emitter saturation voltage, etc.

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This document provides the absolute maximum ratings and electrical characteristics of the KSA1298 PNP epitaxial silicon transistor. The transistor is a low frequency power amplifier and is complementary to the KSC3265.

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This document is about the absolute maximum ratings, electrical characteristics, classification, symbol, parameter, test condition, minimum value, typical value and maximum value of KSA539 PNP Epitaxial Silicon Transistor.

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