Fairchild Manuals (Industrial)

The KSC2330 is a NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor Corporation. It has the following features: maximum collector-emitter voltage 300V, maximum collector-base voltage 300V, maximum emitter-base voltage 7V, maximum collector current 100mA, maximum collector power dissipation 1W, maximum junction temperature 150°C, storage temperature range -55~+150°C.

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The KSC2331 is a NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation with low frequency amplifier and medium speed switching function, it can complement KSA931, with rated maximum collector-base voltage 80V, collector current 700mA and collector power dissipation 1W.

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The KSC2383 is a NPN type transistor from Fairchild Semiconductor Corporation. Its maximum rated voltage is 160V, maximum rated current is 1A, and maximum rated power is 900mW. Its typical operating temperature is -55°C to 150°C.

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This document provides the absolute maximum ratings and electrical characteristics of the KSC3265 NPN epitaxial silicon transistor. It features a collector-base voltage of 30V, a collector-emitter voltage of 25V, an emitter-base voltage of 5V, and a collector current of 800mA.

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KSC5019 is a low saturation NPN silicon transistor with a maximum collector-emitter saturation voltage of 0.5V and a maximum collector-emitter breakdown voltage of 10V.

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KSC815 is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. Its package is TO-92, with a rated power of 400mW and a rated voltage of 60V. The transistor has the function of low frequency amplifier and high frequency oscillator.

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The KSC945 is a NPN Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-base reverse voltage is 60V, collector-emitter maximum voltage is 50V, emitter-base maximum voltage is 5V, maximum collector current is 150mA, maximum collector power dissipation is 250mW, maximum junction temperature is 150℃, and storage temperature range is -55~150℃.

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KSD261 is an NPN type integrated circuit produced by Fairchild Semiconductor Corporation. Its maximum collector current is 500mA, maximum collector-emitter voltage is 20V, maximum emitter-base voltage is 5V, maximum collector-base voltage is 40V.

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This is a technical document about KSD5041, an NPN Epitaxial Silicon Transistor with low VCE (sat) and high performance.

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This document describes the absolute maximum ratings and electrical characteristics of the KSH44H11 NPN epitaxial silicon transistor. The transistor features a collector-emitter voltage of 80V, a collector current of 8A, and a collector dissipation of 1.75W.

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This document provides information on the absolute maximum ratings and electrical characteristics of the KSP05/06 NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation. The transistor has high voltage and power dissipation capabilities and is a complement to the KSP55/56.

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The KSD1616/1616A is an audio frequency power amplifier and medium speed switching device, with a rated voltage of 60V and 120V and a rated current of 1A and 2A.

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This document is a datasheet for the KSP2222A NPN General Purpose Amplifier. The features of this product include a collector-emitter voltage of 40V and a collector power dissipation of 625mW.

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KSP2907A is a PNP general purpose amplifier produced by Fairchild Semiconductor Corporation. Its characteristics are collector-emitter voltage VCEO= 60V, collector power dissipation PC (max)=625mW. The chip has two packages with and without “-C”. The package with “-C” is the center collector and the package without “-C” is the side collector. The chip's model is PN2907A.

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KSP42/43 is a NPN type high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 300V and its maximum collector-emitter power dissipation is 625mW.

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KSP44/45 is a high voltage transistor produced by Fairchild Semiconductor Corporation. The maximum collector-emitter voltage is 400V, the maximum collector-base voltage is 500V, and the maximum emitter-base voltage is 6V.

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This document presents the absolute maximum ratings and electrical characteristics of the KSP55/56 PNP Epitaxial Silicon Transistors produced by Fairchild Semiconductor Corporation. It includes the maximum voltage, current, power dissipation, temperature ratings of the device, as well as the breakdown voltage of collector-emitter, breakdown voltage of emitter-base, collector cut-off current, collector-emitter saturation voltage, base-emitter on voltage, current gain bandwidth, and other electrical characteristics.

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This datasheet provides the specifications of KSP92/93, including voltage, current, power, temperature, etc.

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The KSP94 is a high voltage PNP type transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -400V, maximum collector-base voltage is -400V, maximum emitter-base voltage is -6V, maximum collector current is -300mA, maximum collector power dissipation is 625mW, maximum junction temperature is 150°C, and maximum storage temperature is -55~150°C.

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KST05/06 is an NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 60V, maximum collector-emitter saturation voltage is 0.25V, maximum emitter-base voltage is 4V, maximum collector current is 500mA, and maximum power consumption is 350mW. The package type is SOT-23.

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