Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
This document is a product data sheet for the NXP BUK9880-55A, an N-channel enhancement mode Field-Effect Transistor (FET). The device utilizes TrenchMOS technology in a plastic SC-73 package and is qualified to AEC standards for use in automotive critical applications. It features low conduction losses due to its low on-state resistance and is suitable for logic level gate drive sources.
| Drain-source on-state resistance (RDSon) | 62 mΩ |
|---|---|
| Package type | SC-73 plastic surface-mounted package with increased heatsink; 4 SOT 223 leads |
| Technology | TrenchMOS |
It is designed and qualified for use in automotive critical applications.
Yes, it is suitable for logic level gate drive sources.