Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
This document is a product data sheet for the NXP BUK92150-55A, a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. The device is housed in a DPAK (SOT428) plastic package and is qualified to AEC standards for use in automotive critical applications. Key features include low conduction losses, suitability for logic level gate drive sources, and a maximum junction temperature rating of 175 °C.
| Package type | DPAK (SOT428) |
|---|
The maximum junction temperature is 175 °C.
Yes, it is designed and qualified to the appropriate AEC standard for use in automotive critical applications.