Vishay SiHD186N60EF Power MOSFET datasheet covering absolute maximum ratings, electrical specifications, and TO-252 package details.
The Vishay SiHD186N60EF is a single N-channel power MOSFET in a DPAK (TO-252) package using 4th generation E series technology. It is rated for a drain-source voltage of 600 V and a typical on-state resistance of 0.175 Ω at VGS = 10 V.
The document provides absolute maximum ratings, thermal resistance ratings, electrical characteristics, and typical characteristics curves. Listed applications include server and telecom power supplies, switch mode power supplies, lighting, welding, induction heating, motor drives, battery chargers, and solar PV inverters.
| Drain-source voltage | 600 V |
|---|---|
| Drain-source on-state resistance | 0.175 Ω typ. |
| Total gate charge | 32 nC max. |
| Package | DPAK (TO-252) |
| Continuous drain current | 19 A at TC = 25 °C |
| Maximum power dissipation | 156 W |
| Operating junction temperature range | -55 to +150 °C |
It is rated for 600 V.
The device uses a DPAK (TO-252) package.
It is 0.175 Ω at VGS = 10 V and 25 °C.
The maximum total gate charge is 32 nC.