The Toshiba 2SB834 transistor datasheet provides electrical parameters, package details, and operating limits.
This datasheet describes the 2SB834 PNP silicon transistor, including its physical dimensions, lead layout, and typical packaging. The document lists the TO‑220 package and provides the chip size, lead dimensions, and metal composition of the electrodes.
Key electrical specifications are given, such as collector dissipation power, voltage ratings, current limits, and temperature ranges. The sheet also includes typical parameter values and test conditions for designers. This manual is written in Chinese.
| Collector dissipation power (Pc) | 30W |
|---|---|
| Collector‑Base voltage (VcBo) | -60V |
| Collector‑Emitter voltage (VcEo) | -60V |
| Collector current (Ic) | -3A |
| Base current (IB) | -0.3A |
| Storage temperature range (Tse) | 55~150 °C |
| Junction temperature (Ti) | 150 °C |
| Package type | TO‑220 |
| Typical package | 2SB834, HB834 |
The maximum collector dissipation power is 30 W.
Both the collector‑base and collector‑emitter voltage ratings are –60 V.
The transistor can be stored between 55 °C and 150 °C.
It uses a TO‑220 package.