This technical review article details the development, structure, and high-speed modulation characteristics of a 10Gbit/s 1.3 µm AlGaInAs DFB laser…
This document describes the development of a 10Gbit/s 1.3 µm AlGaInAs DFB laser designed for high-speed optical communication systems like 10Gbit Ethernet and OC-192. It highlights the use of AlGaInAs material to achieve superior temperature characteristics compared to traditional GaInAsP lasers, allowing operation at 85°C without temperature control. The paper details the laser's structure, including the ridge waveguide design and metalorganic vapor phase epitaxy (MOVPE) growth process.
| Wavelength | 1.3 µm |
|---|---|
| Data Rate | 10Gbit/s |
| Operating Temperature | up to 85°C |
| Relaxation Oscillation Frequency | excess of 9 GHz |
| 3dB Bandwidth | 12GHz |
| Side Mode Suppression Ratio | 40dB or more |
| Element Length | 250µm |
| Modulation Speed | 10.3125 Gbit/s |
The laser uses AlGaInAs as an alternative material to GaInAsP to improve high-temperature performance.
Yes, the laser is designed to operate at 10Gbit/s even if the temperature rises to 85°C.