STP5NB80 and STP5NB80FP are N-CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFETs with extremely high dv/dt capability, very low intrinsic capacitances, and minimized gate charge. They are suitable for high current, high-speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies, and motor drive applications.
The PowerMESH™ MOSFET family from STMicroelectronics uses a high‑voltage MESH overlay process to deliver low on‑resistance, high avalanche capability, and fast switching performance. Two variants are offered: the standard TO‑220 package (STP5NB80) and the low‑profile TO‑220FP package (STP5NB80FP).
Key specifications include an 800 V drain‑source rating, 5 A continuous drain current at 25 °C, 20 A pulsed current, and total power dissipation of 110 W (TO‑220) or 40 W (TO‑220FP). The devices are suited for high‑current, high‑speed switching applications such as SMPS, DC‑AC converters for welding, UPS, and motor drives.
| Drain‑source Voltage (Vds) | 800 V |
|---|---|
| Gate‑source Voltage (Vgs) | +30 V |
| Continuous Drain Current (Id) @ 25 °C | 5 A |
| Pulsed Drain Current (Id,pulse) | 20 A |
| Total Dissipation (Ptot) @ 25 °C | 110 W (TO‑220), 40 W (TO‑220FP) |
| Junction‑case Thermal Resistance (Rjc) | 1.13 °C/W (TO‑220), 3.1 °C/W (TO‑220FP) |
| Typical On‑Resistance (Rds(on)) | 1.8 mΩ |
The device is rated for a maximum drain‑source voltage of 800 V.
It can conduct up to 5 A continuously at 25 °C.
The TO‑220 package can dissipate up to 110 W, while the TO‑220FP package can dissipate up to 40 W at 25 °C.