MT3S45T is a NPN transistor produced by Toshiba. It has excellent noise characteristics and high gain, which is suitable for VHF～UHF low noise amplification and VCO applications.
The MT3S45T is a silicon NPN epitaxial planar transistor designed for VHF/UHF low‑noise amplification and VCO applications. The datasheet provides detailed electrical parameters, microwave performance, and handling guidelines.
Key sections include general device ratings, DC and AC characteristics, transition frequency data, and recommended static protection measures for safe handling in electronic designs. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 8 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 4.5 V |
| Emitter‑Base Voltage (Vebo) | 1.5 V |
| Maximum Collector Current (Ic) | 30 mA |
| Maximum Base Current (Ib) | 15 mA |
| Collector Power Dissipation (Pc) | 100 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The maximum collector‑emitter voltage is 4.5 V.
The device can be stored between –55 °C and +150 °C.