RN2201～RN2206 is a PNP type NPN transistor developed by Toshiba. It has a variety of specifications and is suitable for various switching and driving circuits.
The RN2201‑RN2206 series are PNP epitaxial transistors with built‑in bias resistors, intended for switching, inverter, interface and driver circuits. The document lists maximum ratings, electrical parameters, and typical gain values for each part number.
The data includes collector‑base voltage, collector‑emitter voltage, collector current, power dissipation, storage temperature range, and DC current gain. A handling notice warns that these semiconductors are not guaranteed for safety‑critical applications such as nuclear, aerospace, or medical equipment. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 50 V |
| Collector Current (Ic) | 100 mA |
| Power Dissipation (Pc) | 300 mW |
| Storage Temperature Range (Tstg) | -55 °C to 150 °C |
| Operating Temperature (Ta) | -25 °C to 100 °C |
The maximum collector‑base voltage is 50 V.
They are rated for a collector current of up to 100 mA.
The devices can be stored from –55 °C to +150 °C.