2SA2195 is a silicon PNP epitaxial transistor produced by Toshiba. It is mainly used for high-speed switching, DC-DC converters and flash lights. The transistor has high DC current gain (hFE = 200~500), low saturation voltage (VCE(sat) = −0.2 V) and fast switching time (tf = 90 ns).
The 2SA2195 is a silicon epitaxial PNP transistor designed for high‑speed switching applications such as DC‑DC converters and strobe flash circuits. It offers low collector‑emitter saturation voltage and high current gain, making it suitable for fast switching and high‑frequency circuits.
The datasheet lists key specifications including a maximum VCE(sat) of 0.2 V, collector‑base voltage rating of –50 V, and typical switching time of 90 ns. Reliability information advises operation within –55 °C to 150 °C and highlights the importance of adhering to Toshiba’s semiconductor handling guidelines for safety‑critical applications. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Saturation Voltage (VCE(sat)) | 0.2 V max |
| Emitter‑Base Voltage (Vebo) | -7 V |
| Maximum Collector Current (Ic) | 200 mA |
| Switching Time | 90 ns (typical) |
| Storage Temperature Range | -55 °C to 150 °C |
| Package Size | 25.4 mm × 25.4 mm × 0.8 mm |
The maximum VCE(sat) is 0.2 V.
The device should be stored between –55 °C and 150 °C.
Typical switching time is 90 ns.