2SC5263 is a silicon NPN RF power transistor from Toshiba. It features low noise characteristics and is suitable for VHF~UHF bands of low noise amplification
The Toshiba 2SC5263 is a silicon NPN epitaxial planar transistor intended for very‑high‑frequency low‑noise amplification. 東芝トランジスタ シリコンNPN エピタキシャルプレーナ形.
Key electrical ratings include a collector‑base voltage of 15 V, collector‑emitter voltage of 7 V, emitter‑base voltage of 15 V, collector current up to 15 mA, and a power dissipation of 100 mW. The device operates from –55 °C to 125 °C and shows a noise figure of 1.7 dB at 2 GHz. This manual is written in Japanese.
| Collector‑Emitter Voltage (Vceo) | 7 V |
|---|---|
| Emitter‑Base Voltage (Vebo) | 15 V |
| Power Dissipation (Pc) | 100 mW |
| Operating Temperature Range | -55 °C to 125 °C |
| Noise Figure (NF) at 2 GHz | 1.7 dB |
The maximum collector‑emitter voltage is 7 V.
It can operate from –55 °C up to 125 °C.
The noise figure is 1.7 dB at 2 GHz.