RN1114～RN1118 are a series of NPN silicon transistors produced by Toshiba Corporation. They have built-in bias resistors and are suitable for various circuit designs. They can be used for switching, inverter, interface circuit, and driver circuit applications. They offer advantages such as miniaturization and simplified assembly.
The RN1114‑RN1118 series are NPN silicon epitaxial transistors with integrated bias resistors, intended for switching, inverter, interface and driver circuits. The built‑in resistors reduce component count, enabling smaller and easier‑to‑assemble designs.
The datasheet lists maximum ratings such as 50 V collector‑base and collector‑emitter voltages, 100 mA collector current, and 100 mW power dissipation, as well as typical bias resistor values for each part number. It also includes safety notes that the devices are not guaranteed for safety‑critical applications. This manual is written in Japanese.
| Collector‑Base Voltage (V_CBO) | 50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 50 V |
| Collector Current (I_C) | 100 mA |
| Power Dissipation (P_C) | 100 mW |
| Junction Temperature (T_j) | 150 °C |
| Storage Temperature (T_stg) | -55 °C to 150 °C |
| Bias Resistor R1 (RN1114) | 1 kΩ |
The maximum collector‑emitter voltage is 50 V for all devices in the series.
RN1114 includes a 1 kΩ bias resistor.
Each device is rated for a maximum power dissipation of 100 mW.