RN1201～RN1206 is a silicon NPN transistor from Toshiba. Its feature is that it has built-in bias resistors, which can reduce the number of components, reduce the size of the device, and simplify the assembly. The product is widely used in switching, inverter, interface and driver circuits.
The RN1201‑RN1206 series are silicon NPN epitaxial transistors offered by Toshiba for switching, inverter, interface, and driver circuits. They integrate bias resistors, enabling compact designs and simplified assembly.
The datasheet lists maximum ratings such as 50 V collector‑base and collector‑emitter voltages, 100 mA collector current, and 300 mW power dissipation, along with operating temperature ranges from –55 °C to 150 °C. Electrical parameters, bias resistor values, and typical characteristic curves are provided for each part number. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 50 V |
| Collector Current (Ic) | 100 mA |
| Operating Temperature Range | -55 °C to 150 °C |
| Bias Resistor R1 (RN1201) | 47 kΩ |
| Bias Resistor R2 (RN1201) | 47 kΩ |
The maximum collector‑base voltage is 50 V.
The series is rated for a collector current of 100 mA.
Both bias resistors R1 and R2 are 47 kΩ for RN1201.
They can operate from –55 °C up to 150 °C.