MT6P03AE is a silicon NPN transistor produced by Toshiba. The maximum voltage is 10V, the maximum current is 40mA, and the maximum power loss is 100mW. The package form is 6-pin ES6.
The MT6P03AE is a silicon NPN epitaxial planar transistor offered by Toshiba, packaged in an ultra‑small ES6 6‑pin package. It is intended for use in general‑purpose electronic equipment such as computers, measurement devices, and industrial robots.
The datasheet lists key electrical parameters such as collector‑base voltage, collector‑emitter voltage, transition frequency, and noise figure, and includes important handling notes because the device is sensitive to static electricity. Storage and operating temperature limits are also provided. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 10 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 5 V |
| Emitter‑Base Voltage (Vebo) | 2 V |
| Collector Current (Ic) | 40 mA |
| Emitter Current (Ie) | 10 mA |
| Operating Temperature (T) | 125 °C |
| Storage Temperature (Tstg) | -55 °C to 125 °C |
The maximum collector‑base voltage is 10 V.