This Toshiba datasheet covers the RN1207, RN1208 and RN1209 silicon NPN epitaxial transistors with built-in bias resistors. The devices are intended for switching, inverter, interface and driver circuits, and are complementary to the RN2207-RN2209 series.
The document lists absolute maximum ratings, electrical characteristics, equivalent circuits and bias resistor values for each model. It also includes characteristic curves and handling precautions for Toshiba semiconductor products. This manual is written in Japanese.
| Collector current | 100 mA |
|---|---|
| Collector dissipation | 300 mW |
| Junction temperature | 150 °C |
| Storage temperature | -55 to 150 °C |
| RN1207 bias resistors | R1 10 kΩ, R2 47 kΩ |
| RN1208 bias resistors | R1 22 kΩ, R2 47 kΩ |
| RN1209 bias resistors | R1 47 kΩ, R2 22 kΩ |
R1 is 10 kΩ and R2 is 47 kΩ.
The collector current rating is 100 mA.
The storage temperature ranges from -55 to 150 °C.
They are complementary to the RN2207-RN2209 series.