This document describes the features and characteristics of Toshiba's bidirectional thyristor products SM8G45, SM8J45, SM8G45A, SM8J45A released on July 8, 2004. These products are designed for AC power control, with peak repetitive off-state voltage of 400, 600V, effective on-state current of 8A, and critical rate of rise of off-state voltage of 10V/μs (Min.) for general type or 4V/μs (Min.) for high sensitivity type. The products are packaged in TO-220AB, providing easy handling and installation.
The SM8G45 series and its variants are silicon‑controlled rectifier (SCR) devices intended for power control applications. They are supplied in a TO‑220AB package with lead spacing of at least 1.6 mm, making them easy to mount on printed circuit boards.
Key parameters include peak repetitive off‑voltage ratings of 400 V (standard) or 600 V (high‑sensitivity), RMS on‑current of 8 A, and a gate trigger voltage as low as 0.2 V. The devices operate over a temperature range of –40 °C to 125 °C and are marked as lead‑free when applicable. The datasheet also provides detailed gate‑trigger and average‑on‑loss characteristics for design reference. This manual is written in Japanese.
| Peak Repetitive Off‑Voltage (VDRM) | 400 V (standard) / 600 V (high‑sensitivity) |
|---|---|
| RMS On‑Current (ITCRMS) | 8 A |
| Holding Current (ITw) | 1 A |
| Operating Temperature Range | -40 °C to 125 °C |
| Package Type | TO‑220AB, lead spacing ≥1.6 mm |
The devices are rated for operation from –40 °C to 125 °C.
The standard type is rated at 400 V, while the high‑sensitivity type is rated at 600 V.
The SCRs can handle an RMS on‑current of 8 A.